期刊
ACS APPLIED MATERIALS & INTERFACES
卷 5, 期 23, 页码 12579-12586出版社
AMER CHEMICAL SOC
DOI: 10.1021/am4039008
关键词
organic field-effect transistors; inkjet printing; ambipolar semiconductor; ambipolar integrated circuits; patterning process; gate dielectric
资金
- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education Science and Technology (MEST), Korea [2013073183]
- Dongguk University
- National Research Foundation of Korea (NRF)
- Korean government (MSIP) [2013-059210]
Here, we report the so-called soft-etching process based on an inkjet-printing technique for realizing high-performance printed and flexible organic electronic circuits with conjugated polymer semiconductors. The soft-etching process consists of selective etching Of the gate made of a dielectric polymer and deposition of another gate dielectric layer. The method enables the use of a more desirable polymer dielectric layer for the p-channel and n-channel organic field-effect transistors (OFETs) in complementary integrated circuits. We fabricated high-performance ambipolar complementary inverters and ring oscillators (ROs) using poly([N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)) (P(NDI2OD-T2)) as the active layer as well as poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and polystyrene ((PS)/P(VDF-TrFE)) as dielectric materials for the p-channel (pull-up transistor) and n-channel (pull-down transistor) OFETs, respectively. The PS dielectric polymer was selectively etched by inkjetting of n-butyl acetate as an orthogonal solvent for P(NDI2OD-T2). Employing this methodology, the five-stage ambipolar ROs with P(NDI2OD-T2) exhibited an oscillation frequency of similar to 16.7 kHz, which was much higher than that of non-soft-etched ROs with a single dielectric layer (P(VDF-TrFE); similar to 3 kHz).
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