Accelerated Formation of Metal Oxide Thin Film at 200 °C Using Oxygen Supplied by a Nitric Acid Additive and Residual Organic Suction Vacuum Annealing for Thin-Film Transistor Applications
Accelerated Formation of Metal Oxide Thin Film at 200 °C Using Oxygen Supplied by a Nitric Acid Additive and Residual Organic Suction Vacuum Annealing for Thin-Film Transistor Applications
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