Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering for High Performance and Low Energy Consumption Resistive Memory with Controllable High Resistance States

标题
Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering for High Performance and Low Energy Consumption Resistive Memory with Controllable High Resistance States
作者
关键词
-
出版物
ACS Applied Materials & Interfaces
Volume 5, Issue 16, Pages 7831-7837
出版商
American Chemical Society (ACS)
发表日期
2013-07-22
DOI
10.1021/am4016928

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