4.8 Article

Oriented Film Growth of Ba1-xSrxTiO3 Dielectrics on Glass Substrates Using 2D Nanosheet Seed Layer

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 5, 期 11, 页码 4592-4596

出版社

AMER CHEMICAL SOC
DOI: 10.1021/am400849z

关键词

nanosheet; seed layer; Ba1-xSrxTiO3; thin-film growth; dielectrics

资金

  1. CREST program of the Japan Science and Technology Agency (JST)
  2. World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics, MEXT, Japan
  3. Grants-in-Aid for Scientific Research [25420724] Funding Source: KAKEN

向作者/读者索取更多资源

An approach to fabricate Ba0.5Sr0.5TiO3 (BST) films with a preferred orientation on a glass substrate by pulsed laser deposition was developed. To ensure a preferred crystallographic orientation, we utilized a molecularly thin Ca2Nb3O10 perovskite nanosheet as a seed layer and successfully fabricated BST films with a nearly perfect (100)axis orientation. The 100 nm films after annealing at 450 degrees C in air showed a good dielectric performance (epsilon(r) > 400), which was comparable to the epsilon(r) value of epitaxially grown films with the same thickness. These results indicate that the nanosheet seed layer plays a crucial role in controlled film growth, realizing a nearly intrinsic performance of BST.

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