期刊
ACS APPLIED MATERIALS & INTERFACES
卷 4, 期 3, 页码 1411-1416出版社
AMER CHEMICAL SOC
DOI: 10.1021/am201667m
关键词
filed emission; ZnO; silicon nanopillars; atomic layer deposition
资金
- National Science Council of Taiwan [NSC 100-2811-M-009-037]
- MOE-ATP
An effective method of fabricating vertically aligned silicon nanopillars (Si-NPs) was realized by using the self-assembled silver (Ag) nanodots as natural metal-nanomask during dry etching process. The obtained Si-NPs were preferentially aligned along the c-axis direction. Ultrathin ZnO films (similar to 9 nm) were subsequently deposited on the Si-NPs by atomic layer deposition (ALD) to enhance the field emission property. The average diameter of the ZnO/Si-NPs is in the order of tens of nanometers, which enables efficient field emission and gives rise to marked improvement in the field enhancement factor, beta. The turn-on field defined by the 10 mu A/cm(2) current density criterion is similar to 0.74 V/mu m with an estimated beta approximate to 1.33x10(4). The low turn-on field and marked enhancement in beta were attributed to the small radius of curvature, high aspect ratio, and perhaps more importantly, proper density distribution of the ZnO/Si-NPs.
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