Reduced Workfunction Intermetallic Seed Layers Allow Growth of Porous n-GaN and Low Resistivity, Ohmic Electron Transport

出版年份 2012 全文链接

标题

作者

关键词

出版物

Volume 4, Issue 12, Pages 6927-6934

出版商

American Chemical Society (ACS)

发表日期

2012-11-21

DOI

10.1021/am3020668

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