期刊
ACS APPLIED MATERIALS & INTERFACES
卷 3, 期 8, 页码 3033-3041出版社
AMER CHEMICAL SOC
DOI: 10.1021/am200541p
关键词
silicon nanocrystals; hydrosilylation; surface functionalization
资金
- NSF [CMMI-0846858, CBET-0846923]
- CRSP [KXFE-9-99001-08]
- Colorado School of Mines (NSF) [DMR-0820518]
- U.S. Department of Energy [DE-AC36-99GO10337]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0820518] Funding Source: National Science Foundation
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [0846923] Funding Source: National Science Foundation
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [0846858] Funding Source: National Science Foundation
Surface passivation of semiconductor nanocrystals (NCs) is critical in enabling their utilization in novel optoelectronic devices, solar cells, and biological and chemical sensors. Compared to the extensively used liquid-phase NC synthesis and passivation techniques, gas-phase routes provide the unique opportunity for in situ passivation of semiconductor NCs. Herein, we present a method for in situ gas-phase organic functionalization of plasma-synthesized, H-terminated silicon (Si) NCs. Using real-time in situ attenuated total reflection Fourier transform IR spectroscopy, we have studied the surface reactions during hydrosilylation of Si NCs at 160 degrees C. First, we show that, during gas-phase hydrosilylation of Si NCs using styrene (1-alkene) and acetylene (allcyne), the reaction pathways of the alkenes and allcynes chemisorbing onto surface SiHx (x = 1-3) species are different. Second, utilizing this difference in reactivity, we demonstrate a novel pathway to enhance the surface ligand passivation of Si NCs via in situ gas-phase hydrosilylation using the combination of a short-chain alkyne (acetylene) and a long-chain 1-alkene (styrene). The quality of surface passivation is further validated through IR and photoluminescence measurements of Si NCs exposed to air.
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