期刊
ACS APPLIED MATERIALS & INTERFACES
卷 7, 期 42, 页码 23489-23495出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b05694
关键词
phosphorene; heterostructure; band gap; anisotropic transport; optical property
资金
- Basic Science Research Program through National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2013R1A1A2006071]
- Super-computing Center/Korea Institute of Science and Technology Information [KSC-2015-C3-040]
Phosphorene is receiving great research interests because of its peculiar physical properties. Nonetheless, the phosphorus has a trouble of degradation due to oxidation. Hereby, we propose that the electrical and optical anisotropic properties can be preserved by encapsulating into hexagonal boron nitride (h-BN). We found that the h-BN contributed to enhancing the band gap of the phosphorene layer. Comparing the band gap of the pristine phosphorene layer, the band gap of the phosphorene/BN(1ML) system was enhanced by 0.15 eV. It was further enhanced by 0.31 eV in the BN(1ML)/phosphorene/BN(1ML) trilayer structure. However, the band gap was not further enhanced when we increased the thickness of the h-EN layers even up to 4 MLs. Interestingly, the anisotropic effective mass and optical property were still preserved in BN/phosphorene/BN heterostructures. Overall, we predict that the capping of phosphorene by the h-BN layers can be an excellent solution to protect the intrinsic properties of the phosphorene.
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