4.2 Article

Tehrahertz CMOS Design for Low-Power and High-Speed Wireless Communication

期刊

IEICE TRANSACTIONS ON ELECTRONICS
卷 E98C, 期 12, 页码 1091-1104

出版社

IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
DOI: 10.1587/transele.E98.C.1091

关键词

high-frequency circuit design; CMOS; millimeter wave; terahertz

资金

  1. STARC
  2. Ministry of Internal Affairs and Communications, Japan

向作者/读者索取更多资源

There have recently been more and more reports on CMOS integrated circuits operating at terahertz (>= 0.1 THz) frequencies. However, design environments and techniques are not as well established as for RF CMOS circuits. This paper reviews recent progress made by the authors in terahertz CMOS design for low-power and high-speed wireless communication, including device characterization and modeling techniques. Low-power high-speed wireless data transfer at 11 Gb/s and 19 pJ/bit and a 7-pJ/bit ultra-low-power transceiver chipset are presented.

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