期刊
SPIN
卷 8, 期 1, 页码 -出版社
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S2010324718400040
关键词
Complex oxides; semiconductor spintronics; spin accumulation; spin lifetime; Rashba spin-orbit coupling; electric field
资金
- Dieptestrategie grant from the Zernike Institute for Advanced Materials, University of Groningen
We demonstrate an electric field control of spin lifetime at room temperature, across a semiconducting interface of Nb:STO using Ni/AlOx as spin injection contacts. We achieve this by a careful tailoring of the potential landscape in Nb:STO, driven by the strong response of the intrinsically large dielectric permittivity in STO to electric fields. The built-in electric field at the Schottky interface with Nb: STO tunes the intrinsic Rashba spin-orbit fields leading to a bias dependence of the spin lifetime in Nb:STO. Such an electric field driven modulation of spin accumulation has not been reported earlier using conventional semiconductors. This not only underpins the necessity of a careful design of the spin injection contacts but also establishes the importance of Nb:STO as a rich platform for exploring spin-orbit driven phenomena in complex oxide based spintronic devices.
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