Article
Optics
Lifu Zhang, Jie Jiang, Christian Multunas, Chen Ming, Zhizhong Chen, Yang Hu, Zonghuan Lu, Saloni Pendse, Ru Jia, Mani Chandra, Yi-Yang Sun, Toh-Ming Lu, Yuan Ping, Ravishankar Sundararaman, Jian Shi
Summary: Researchers demonstrate a persistent spin helix in an organic-inorganic hybrid ferroelectric halide perovskite. They show that the spin-polarized band structure can be switched via an intrinsic ferroelectric field. This discovery has the potential to resolve the control-relaxation dilemma in spintronic devices.
Article
Multidisciplinary Sciences
Ryan M. Jock, N. Tobias Jacobson, Martin Rudolph, Daniel R. Ward, Malcolm S. Carroll, Dwight R. Luhman
Summary: This research demonstrates a method for controlling electron spin qubits on a silicon heterointerface through spin-orbit effects, without the need for complex nanofabrication equipment. The method offers high logic gate orthogonality and long qubit coherence time, while enabling fast control. The study also investigates charge noise in a silicon double quantum dot through dynamical decoupling experiments and evaluates qubit frequency drift and low-frequency noise.
NATURE COMMUNICATIONS
(2022)
Article
Quantum Science & Technology
Abhikbrata Sarkar, Joel Hochstetter, Allen Kha, Xuedong Hu, Michelle Y. Simmons, Rajib Rahman, Dimitrie Culcer
Summary: Multi-donor quantum dots play a crucial role in the development of Si-based quantum computation. Specifically, 2P:1P spin qubits with built-in dipole moment are suitable for electron dipole spin resonance (EDSR) due to the donor hyperfine interaction. The fastest EDSR time occurs when the 2P:1P axis is parallel to [111], while the best Rabi ratio occurs when it is parallel to [100]. The qubit is robust against 1/f noise if operated away from the charge anti-crossing. Entanglement via exchange is significantly faster than dipole-dipole coupling.
NPJ QUANTUM INFORMATION
(2022)
Article
Physics, Applied
He Liu, Ting Zhang, Ke Wang, Fei Gao, Gang Xu, Xin Zhang, Shu-Xiao Li, Gang Cao, Ting Wang, Jianjun Zhang, Xuedong Hu, Hai-Ou Li, Guo-Ping Guo
Summary: Researchers have demonstrated a tunable spin-orbit interaction in a double quantum dot system in a germanium hut wire. This finding could enable fast spin manipulation and reduce decoherence, potentially leading to high-fidelity qubits in germanium hut wire systems.
PHYSICAL REVIEW APPLIED
(2022)
Article
Physics, Multidisciplinary
Peihao Huang, Xuedong Hu
Summary: The study of synthetic spin-orbit coupling (SOC) in a quantum dot reveals significant differences in the spin dynamics compared to intrinsic SOC, with synthetic SOC inducing distinct spin relaxation, spin dephasing, and spin manipulation behaviors attributed to the broken time-reversal symmetry. These results highlight the important impact of synthetic SOC on spin dynamics in quantum dots, providing insights into potential applications in spin-based quantum computing.
NEW JOURNAL OF PHYSICS
(2022)
Article
Multidisciplinary Sciences
Rostyslav Savytskyy, Tim Botzem, Irene Fernandez de Fuentes, Benjamin Joecker, Jarryd J. Pla, Fay E. Hudson, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Andrew S. Dzurak, Andrea Morello
Summary: The spins of atoms and atom-like systems, which store quantum information, can now be controlled using local electric fields without the need for oscillating magnetic fields. This breakthrough was achieved by operating a single-atom flip-flop qubit in silicon, where quantum information is encoded in the electron-nuclear states of a phosphorus donor. This method, which modulates the electron-nuclear hyperfine coupling, can be extended to other atomic and molecular systems and enable the hyperpolarization of nuclear spin ensembles.
Article
Materials Science, Multidisciplinary
Zoltan Gyorgy, Andras Palyi, Gabor Szechenyi
Summary: The study investigates a bichromatic EDSR scheme, where two driving tones with different frequencies are used to connect the spin Larmor frequency with the sum of the two drive frequencies. The research suggests that this scheme could be beneficial for a shared-control spin qubit architecture by enabling simultaneous single-qubit gates.
Article
Materials Science, Multidisciplinary
Zachary M. Raines, Dmitrii L. Maslov, Leonid I. Glazman
Summary: In this study, we discovered the existence of generalized Silin modes in a multivalley system, monolayer graphene, and investigated their excitation in the spin and valley-staggered-spin channels, as well as their contributions to the optical conductivity.
Article
Materials Science, Multidisciplinary
Shuai-Quan Yang, Mao-Wang Lu, Qing-Meng Guo, Ying-jie Qin, Shi-Shi Xie
Summary: In this study, we investigate the spin polarization of electrons in magnetically and electrically confined semiconductor microstructures. We found that the electron-spin polarization mainly comes from spin-orbit coupling due to the small effective g-factor for GaAs, and the magnitude and sign of spin polarization can be manipulated by adjusting the interfacial confining electric field or strain engineering, making it a tunable electron-spin filter for spintronics device applications.
RESULTS IN PHYSICS
(2021)
Article
Chemistry, Multidisciplinary
Kok Wai Chan, Harshad Sahasrabudhe, Wister Huang, Yu Wang, Henry C. Yang, Menno Veldhorst, Jason C. C. Hwang, Fahd A. Mohiyaddin, Fay E. Hudson, Kohei M. Itoh, Andre Saraiva, Andrea Morello, Arne Laucht, Rajib Rahman, Andrew S. Dzurak
Summary: Quantum gates between spin qubits can be implemented through controlled Heisenberg exchange interaction by adjusting the overlap between electronic wave functions. Another approach is to establish coupling between distant spins through mediated superexchange. Experimental evidence in a linear array of three single-electron spin qubits in silicon confirms direct exchange coupling and second neighbor mediated superexchange.
Article
Quantum Science & Technology
Junxu Li, Manas Sajjan, Sumit Suresh Kale, Sabre Kais
Summary: This report proposes an experimental scheme to study the possible influence of quantum entanglement on the angular features of product distribution in a chemical reaction. The study aims to examine the relationship between quantum entanglement and spin-orbit interaction. The attainable results will be numerically simulated to highlight specific patterns corresponding to various possibilities, potentially providing unforeseen mechanistic insight into analogous reactions.
ADVANCED QUANTUM TECHNOLOGIES
(2021)
Article
Chemistry, Multidisciplinary
Mi-Jin Jin, Doo-Seung Um, Kohei Ohnishi, Sachio Komori, Nadia Stelmashenko, Daeseong Choe, Jung-Woo Yoo, Jason W. A. Robinson
Summary: This study demonstrates nonlocal spin-transport on a two-dimensional surface-conducting SrTiO3 (STO) via the spin Hall effect, without the need for a ferromagnetic spin-injector. Anisotropic spin-signal consistent with Hanle precession of pure spin current is observed by applying magnetic fields at different angles to the nonlocal spin-diffusion. Key transport parameters extracted include a spin Hall angle of approximately 0.25, a spin lifetime of around 49 ps, and a spin diffusion length of approximately 1.23 μm at 2 K.
Article
Physics, Multidisciplinary
Yi-Jian Shi, Yuan-Chun Wang, Peng-Jun Wang
Summary: The paper investigates quantized conductance and valley polarization in silicene nanoconstrictions, finding an almost perfect valley filter effect and proposing new strategies for controlling valley polarization. The valley polarization plateaus shift with increased spin-orbit coupling strength, accompanied by smooth variation in polarization reversal.
Article
Materials Science, Multidisciplinary
Junyoung Kwon, Beom Seo Kim, Mi Kyung Kim, Jonathan Denlinger, Aaron Bostwick, Eli Rotenberg, Nara Lee, Hwan Young Choi, Jae Young Moon, Young Jai Choi, Junsik Mun, Miyoung Kim, Yoshiyuki Yoshida, Wonshik Kyung, Changyoung Kim
Summary: The discovery of an orbital-selective doping effect in Sr2Ru1-xIrxO4 is attributed to variations in spin-orbit coupling strength. This finding not only elucidates the mechanism of LTs in the gamma band in SRIO, but also may open new avenues for novel SOC-controlled orbital-selective phenomena.
Article
Chemistry, Multidisciplinary
Gerald Q. Yan, Senlei Li, Hanyi Lu, Mengqi Huang, Yuxuan Xiao, Luke Wernert, Jeffrey A. Brock, Eric E. Fullerton, Hua Chen, Hailong Wang, Chunhui Rita Du
Summary: This paper reports on the nanoscale imaging of spin-orbit-torque-induced deterministic magnetic switching and chiral spin rotation in non-collinear antiferromagnet Mn3Sn films using nitrogen-vacancy (NV) centers. Direct evidence of the off-resonance dipole-dipole coupling between the spin dynamics in Mn3Sn and proximate NV centers is also demonstrated by NV relaxometry measurements.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Francesca Telesio, Matteo Carrega, Giulio Cappelli, Andrea Iorio, Alessandro Crippa, Elia Strambini, Francesco Giazotto, Manuel Serrano-Ruiz, Maurizio Peruzzini, Stefan Heun
Summary: We demonstrate evidence of Josephson coupling in a planar few-layer black phosphorus junction, confirming its existence and characteristics. These findings will accelerate further research on the unique properties of exfoliated black phosphorus thin flakes.
Article
Engineering, Electrical & Electronic
Alban Gassenq, Ivan Duchemin, Yann-Michel Niquet, Alain Gliere, Nicolas Pauc, Alexei Chelnokov, Vincent Reboud, Vincent Calvo
Summary: This study simulates the cavities in high tensile strained Ge crossbeams and maps the bandgaps for different strain configurations. It shows a trade-off between membrane orientation and arm curvature to achieve the largest possible volume of amplifying material.
IEEE PHOTONICS JOURNAL
(2022)
Article
Physics, Applied
Biel Martinez, Yann-Michel Niquet
Summary: Semiconductor spin qubits can exhibit significant variability between devices due to spin-orbit coupling mechanisms. The roughness of the interface, charge traps, layout, and process variations all contribute to shaping the wave functions and spin properties. Understanding the reproducibility of qubits is crucial for developing strategies to handle variability and setting constraints on material quality and fabrication techniques.
PHYSICAL REVIEW APPLIED
(2022)
Article
Physics, Multidisciplinary
Daniel Jirovec, Philipp M. Mutter, Andrea Hofmann, Alessandro Crippa, Marek Rychetsky, David L. Craig, Josip Kukucka, Frederico Martins, Andrea Ballabio, Natalia Ares, Daniel Chrastina, Giovanni Isella, Guido Burkard, Georgios Katsaros
Summary: In this study, we investigate the effect of the cubic Rashba spin-orbit interaction on the mixing of spin states in a planar Ge hole double quantum dot. Our results show that the spin-flip term induced by the spin-orbit interaction has a significant impact on the spin state mixing. This finding is important for optimizing future qubit experiments.
PHYSICAL REVIEW LETTERS
(2022)
Article
Physics, Applied
Cameron Spence, Bruna Cardoso Paz, Bernhard Klemt, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Vivien Thiney, Benoit Bertrand, Heimanu Niebojewski, Pierre-Andre Mortemousque, Xavier Jehl, Romain Maurand, Silvano De Franceschi, Maud Vinet, Franck Balestro, Christopher Bauerle, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta
Summary: One of the main advantages of silicon spin qubits is its scalability and compatibility with widely used CMOS fabrication technology. In this study, single electron spin detection using energy-selective readout in a CMOS-fabricated nanowire device with an integrated charge detector is demonstrated. The anisotropy of the spin-valley mixing and the charge noise in the strong spin-valley coupling regime are investigated.
PHYSICAL REVIEW APPLIED
(2022)
Article
Chemistry, Multidisciplinary
Yu Fu, Jing Li, Jules Papin, Paul Noel, Salvatore Teresi, Maxen Cosset-Cheneau, Cecile Grezes, Thomas Guillet, Candice Thomas, Yann-Michel Niquet, Philippe Ballet, Tristan Meunier, Jean-Philippe Attane, Albert Fert, Laurent Vila
Summary: Spin-orbit effects in topological insulators and at Rashba interfaces have led to various newly discovered effects. In this study, a bilinear magnetoresistance phenomenon was observed in strained HgTe, and its amplitude and sign could be controlled by adjusting the contributions from opposite surfaces using an electric gate.
Article
Nanoscience & Nanotechnology
N. Piot, B. Brun, V Schmitt, S. Zihlmann, V. P. Michal, A. Apra, J. C. Abadillo-Uriel, X. Jehl, B. Bertrand, H. Niebojewski, L. Hutin, M. Vinet, M. Urdampilleta, T. Meunier, Y-M Niquet, R. Maurand, S. De Franceschi
Summary: This article reports a spin-orbit hole spin qubit, which achieves operation sweet spots by varying the magnetic field direction, reducing charge noise and extending Hahn-echo coherence time, providing new possibilities for the scalability of silicon-based hole spin qubits in quantum information processing.
NATURE NANOTECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
H. Jacquinot, R. Maurand, G. T. Fernandez-Bada, B. Bertrand, M. Casse, Y. M. Niquet, S. de Franceschi, T. Meunier, M. Vinet
Summary: In this study, we conducted simulations on an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation took into account the characteristics of the ESR line, such as geometry, configuration, stack, and material properties, as well as the electromagnetic environment surrounding the qubits, including gates and interconnect networks. By accurately assessing the magnetic and electric field distribution, we found that the EM environment significantly affects the efficiency of the ESR line for spin control, as characterized by the magnetic over electric field ratio generated at the qubit location.
SOLID-STATE ELECTRONICS
(2023)
Article
Nanoscience & Nanotechnology
Cecile X. Yu, Simon Zihlmann, Jose C. Abadillo-Uriel, Vincent P. Michal, Nils Rambal, Heimanu Niebojewski, Thomas Bedecarrats, Maud Vinet, Etienne Dumur, Michele Filippone, Benoit Bertrand, Silvano De Franceschi, Yann-Michel Niquet, Romain Maurand
Summary: Strong intrinsic spin-orbit interaction in silicon enables strong spin-photon coupling with a frequency of 300 MHz, which is promising for scalable quantum information processing. Coupling semiconductor quantum dots to superconducting microwave resonators allows for fast non-demolition readout and on-chip connectivity. By leveraging the strong spin-orbit interaction in silicon, a spin-photon coupling rate of 330 MHz is achieved, surpassing the spin-photon decoherence rate and paving the way for circuit quantum electrodynamics with spins in semiconductor quantum dots.
NATURE NANOTECHNOLOGY
(2023)
Article
Physics, Multidisciplinary
Fabio Ansaloni, Heorhii Bohuslavskyi, Federico Fedele, Torbjorn Rasmussen, Bertram Brovang, Fabrizio Berritta, Amber Heskes, Jing Li, Louis Hutin, Benjamin Venitucci, Benoit Bertrand, Maud Vinet, Yann-Michel Niquet, Anasua Chatterjee, Ferdinand Kuemmeth
Summary: Silicon quantum devices are evolving from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, leading to increased operational complexity and the need for better pulsed-gate and readout techniques.
NEW JOURNAL OF PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Baker Shalak, Christophe Delerue, Yann-Michel Niquet
Summary: In this paper, the effect of telegraphic noise induced by the fluctuation of a single electric charge on a hole spin qubit in a quantum dot is studied. It is shown that in the most realistic configuration of a low-frequency fluctuator, the system exhibits non-Gaussian behavior with loss of phase coherence when the fluctuator changes state. By manipulating the magnetic field and gate potentials, the dephasing time at the threshold frequency can be significantly increased. However, the dephasing time remains bounded due to dephasing induced by nondiagonal terms in the perturbation Hamiltonian. Additionally, it is found that a clean description of spin relaxation in this type of qubit requires multilevel simulations including the coupling to phonons.
Article
Materials Science, Multidisciplinary
V. P. Michal, J. C. Abadillo-Uriel, S. Zihlmann, R. Maurand, Y. -M. Niquet, M. Filippone
Summary: We study a spin circuit-QED device, where a superconducting microwave resonator is connected to a single hole confined in a semiconductor quantum dot via capacitance. The gyromagnetic g matrix of the hole can be electrically modulated due to the strong spin-orbit coupling inherent in valence-band states. This modulation allows for coupling between the photons in the resonator and the hole spin. We demonstrate that the spin-photon interaction can be controlled through gate voltages and magnetic field orientation, and the character of the interaction can switch from fully transverse to fully longitudinal.
Article
Chemistry, Multidisciplinary
P. Kumar, H. Kim, S. Tripathy, K. Watanabe, T. Taniguchi, K. S. Novoselov, D. Kotekar-Patil
Summary: Semiconducting transition metal dichalcogenides (TMDCs) are promising materials for quantum dots and spin-qubit implementation. However, the current quantum dots in TMDCs do not meet the requirements for reliable measurement of excited state spectroscopy and the g-factor. In this study, we successfully achieved electron transport through discrete energy levels in a single layer MoS2 using a dual gate geometry. By accurately measuring the ground state g-factor and observing a spin-filling sequence, we provide a useful platform for evaluating and implementing spin-valley qubits in TMDCs, thus accelerating the development of quantum systems in two-dimensional semiconducting TMDCs.
Article
Materials Science, Multidisciplinary
Biel Martinez, Jose Carlos Abadillo-Uriel, Esteban A. Rodriguez-Mena, Yann-Michel Niquet
Summary: This study discusses the electrical manipulation of hole spins in semiconductor heterostructures subject to inhomogeneous vertical electric fields and/or in-plane ac electric fields. The lack of separability between the vertical and in-plane motions gives rise to an additional spin-orbit coupling mechanism that modulates the principal axes of the hole gyromagnetic g matrix. This mechanism enables spin manipulation even in symmetric dots when the magnetic field is applied in the heterostructure's plane.
Article
Physics, Multidisciplinary
F. T. Armand Pilon, Y-M Niquet, J. Chretien, N. Pauc, V Reboud, V Calvo, J. Widiez, J. M. Hartmann, A. Chelnokov, J. Faist, H. Sigg
Summary: This paper discusses the research progress and methods for optimizing the performance of group IV lasers. By using strained Ge microbridges as samples and measuring the changes in refractive index and mode linewidth, the values of injection carrier densities and cavity losses are derived. The study finds that Ge lasers can achieve lasing at lower temperatures and specific strain conditions, but are limited by parasitic absorption. Material optimization and reducing optical losses are key for improving the performance.
PHYSICAL REVIEW RESEARCH
(2022)