Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr0.7Ca0.3MnO3 Device Characteristics on Neural Network Training Accuracy

标题
Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr0.7Ca0.3MnO3 Device Characteristics on Neural Network Training Accuracy
作者
关键词
-
出版物
IEEE Journal of the Electron Devices Society
Volume 6, Issue -, Pages 169-178
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2017-12-12
DOI
10.1109/jeds.2017.2782184

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