Enhanced photoresponsivity and hole mobility of MoTe 2 phototransistors by using an Al 2 O 3 high-κ gate dielectric

标题
Enhanced photoresponsivity and hole mobility of MoTe 2 phototransistors by using an Al 2 O 3 high-κ gate dielectric
作者
关键词
-
出版物
Science Bulletin
Volume -, Issue -, Pages -
出版商
Elsevier BV
发表日期
2018-06-15
DOI
10.1016/j.scib.2018.06.009

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