Article
Nanoscience & Nanotechnology
Jingzhi Huang, Wenqi Wei, Bo Yang, Dong Han, Zihao Wang, Jianjun Zhang, Ting Wang
Summary: A InAs/GaAs quantum dot discrete mode (DM) laser has been demonstrated on a silicon-on-insulator (SOI) substrate, which can provide stable single-mode operation with a threshold current of 45 mA and an output power of 9 mW. The DM laser shows a maximum optical signal-to-noise ratio (OSNR) of 43.6 dB and an optical linewidth of 157 kHz. It can be externally modulated at 70 Gbit/s with NRZ modulation format and 80 Gbit/s under 4-level PAM4 modulation format. This SOI-based DM laser paves the way toward large-scale and high-power on-chip integrated lasers.
Article
Optics
Di Liang, Sudharsanan Srinivasan, Antoine Descos, Chong Zhang, Geza Kurczveil, Zhihong Huang, Raymond Beausoleil
Summary: The paper presents a 1310 nm heterogeneous quantum-dot distributed feedback laser on silicon with high efficiency and modulation capability, demonstrating isolator-free external modulation at 25 Gb/s using a metal-oxide semiconductor capacitor microring modulator.
Article
Materials Science, Multidisciplinary
Jia-Jian Chen, Zi-Hao Wang, Wen-Qi Wei, Ting Wang, Jian-Jun Zhang
Summary: This study demonstrates the feedback insensitivity of an InAs/GaAs quantum dot laser grown on an Si substrate, operated in a sole excited state, showing potential as a high feedback insensitive laser for silicon photonics integration. Experimental results indicate that these lasers are less sensitive to external optical feedback compared to other types of quantum-well lasers, offering a possible route for on-chip light source integration without the need for an optical isolator.
FRONTIERS IN MATERIALS
(2021)
Article
Physics, Applied
Ying Lu, Xiao Hu, Mingchu Tang, Victoria Cao, Jie Yan, Dingyi Wu, Jae-Seong Park, Huiyun Liu, Xi Xiao, Siming Chen
Summary: We investigated the effects of optical feedback on the static and dynamic characteristics of 1.3μm quantum-dot Fabry-Perot laser. The results showed that the laser can still function under high feedback conditions and has a high feedback tolerance under large signal modulation. This makes it a promising light source for photonic integrated circuits.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Optics
Wen-Qi Wei, An He, Bo Yang, Zi-Hao Wang, Jing-Zhi Huang, Dong Han, Ming Ming, Xuhan Guo, Yikai Su, Jian-Jun Zhang, Ting Wang
Summary: This article introduces an embedded InAs/GaAs quantum dot (QD) laser directly grown on a SOI substrate, enabling monolithic integration with silicon waveguides. By resolving the epitaxy and fabrication challenges, embedded III-V lasers on SOI with continuous-wave lasing are obtained, providing a scalable and low-cost epitaxial method for future high-density photonic integration.
LIGHT-SCIENCE & APPLICATIONS
(2023)
Article
Materials Science, Multidisciplinary
Young-Ho Ko, Kap-Joong Kim, Won Seok Han
Summary: By using a hybrid technique involving AlAs nucleation and thermal cycle annealing, a GaAs quantum-well laser diode was grown directly on a silicon substrate, exhibiting advantages such as low TDD and high quantum efficiency. By optimizing the growth conditions of GaAs on silicon, a continuous-wave laser was successfully fabricated with lower threshold current density under pulsed operation.
OPTICAL MATERIALS EXPRESS
(2021)
Article
Optics
Shuai Wang, Zun-Ren Lv, Qiu-Lu Yang, Sheng-Lin Wang, Hong-Yu Chai, Lei Meng, Dan Lu, Chen Ji, Xiao-Guang Yang, Tao Yang
Summary: A high-power, ultra-low-noise 1.3 μm InAs/GaAs QD distributed feedback laser is demonstrated by combining atom-like quantum dot materials and advanced lateral gratings. This laser achieves stable single-longitudinal-mode output power of 100 mW from 25 celcius to 85 celcius, with a maximum side mode suppression ratio of 62.6 dB. It also demonstrates a high temperature stability, a record-narrow intrinsic linewidth of 1.62 kHz, and a strong tolerance to external optical feedback.
LASER & PHOTONICS REVIEWS
(2023)
Article
Optics
Wenfu Yu, Xuyi Zhao, Shixian Han, Antian Du, Ruotao Liu, Chunfang Cao, Jinyi Yan, Jin Yang, Hua Huang, Hailong Wang, Qian Gong
Summary: We report the operation of InAs/GaAs quantum dot laterally coupled distributed feedback (LC-DFB) lasers at room temperature in the wavelength range of 1.31 μm. Stable continuous-wave single-frequency operation with high output power and excellent side mode suppression ratio was achieved. Furthermore, a single chip integrating three LC-DFB lasers was explored, covering a wide wavelength span at room temperature.
CHINESE OPTICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Namyoung Ahn, Young-Shin Park, Clement Livache, Jun Du, Kivanc Gungor, Jaehoon Kim, Victor I. Klimov
Summary: Laser diodes based on solution-processable materials have immense potential in various technologies. However, there have been challenges in achieving QD laser diodes, including rapid nonradiative decay and device degradation. In this study, we overcome these challenges and demonstrate optically excited lasing from fully functional high-current density electroluminescent devices.
ADVANCED MATERIALS
(2023)
Article
Optics
Jing-Zhi Huang, Wen-Qi Wei, Jia-Jian Chen, Zi-Hao Wang, Ting Wang, Jian-Jun Zhang
Summary: This study achieved the monolithic integration of a stable III-V laser on a standard silicon-on-insulator substrate, proposed a double-side heat dissipation design, successfully demonstrated room-temperature operation of InAs/GaAs QD lasers, and showed the effectiveness of top heat sink design through thermal profile simulation.
Article
Engineering, Electrical & Electronic
Yuanhao Zhang, Fan Yang, Gonghai Liu, Guojiong Li, Minwen Xiang, Qiaoyin Lu, John F. Donegan, Weihua Guo
Summary: In this work, a 1.3-μm directly modulated laser with a ridge waveguide distributed feedback region and a buried waveguide spot-size-converter region was demonstrated. The integration of this spot-size-converter improved beam profile and power coupling efficiency, while the fabrication cost was reduced. The fabricated laser achieved a nearly circular beam profile and more than 70% improvement in power coupling.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2023)
Article
Physics, Applied
F. K. Unseld, M. Meyer, M. T. Madzik, F. Borsoi, S. L. de Snoo, S. V. Amitonov, A. Sammak, G. Scappucci, M. Veldhorst, L. M. K. Vandersypen
Summary: Semiconductor spin qubits have attracted attention as a potential platform for fault-tolerant quantum computing. In this study, researchers successfully created a tunnel-coupled 2x2 quantum dot array in a Si-28/SiGe heterostructure using high-quality materials and carefully designed gate patterns. By loading a single electron into each of the four quantum dots, the researchers were able to achieve the specific charge state (1,1,1,1). This work provides valuable information for the design of 2D quantum dot arrays and represents a significant step towards the operation of spin qubits in Si-28/SiGe quantum dots in two dimensions.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Javad Rahimi, Joris Van Kerrebrouck, Bahawal Haq, Johan Bauwelinck, Gunther Roelkens, Geert Morthier
Summary: This paper demonstrates the high wall-plug efficiency and low threshold current of heterogeneously integrated III-V-on-Silicon distributed feedback (DFB) lasers. A wall plug efficiency of over 12% is achieved for a 200 μm long DFB laser diode at 25 degrees C, with up to two times 6 mW of optical power coupled into the silicon waveguide and a side-mode suppression ratio of more than 40 dB. The paper also discusses the non-return-to-zero on-off keying modulation at 20 Gb/s and the transmission over a 2 km long optical fiber.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2022)
Article
Physics, Multidisciplinary
YongWei Huang, Likun Shi, Jun Li, WenKai Lou, HuiHong Yuan, Wen Yang, Kai Chang
Summary: Topological insulator quantum dots have energy level separation in the terahertz range and can be operated as an electrically pumped continuous-wave terahertz laser. The device can operate at room temperature with power exceeding 10 mW and quantum efficiency reaching around 50%. This study may promote the usage of topological insulator quantum dots as an important source of terahertz radiation.
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
(2021)
Article
Engineering, Electrical & Electronic
Yusheng Bian, Koushik Ramachandran, Zhuo-Jie Wu, Brittany Hedrick, Kevin K. Dezfulian, Thomas Houghton, Karen Nummy, Daniel W. Fisher, Takako Hirokawa, Keith Donegan, Francis O. Afzal, Monica Esopi, Vaishnavi Karra, Won Suk Lee, Massimo Sorbara, Jorge Lubguban, Jae Kyu Cho, Rongtao Cao, Hanyi Ding, Sujith Chandran, Michal Rakowski, Abdelsalam Aboketaf, Subramanian Krishnamurthy, Scott Mills, Bo Peng, Jeff Pepper, Suruj Deka, Wen Feng, Steven Rishton, Marcel Boudreau, Dylan Logan, Ryan Hickey, Prova Christina Gomes, Kyle Murray, Arnab Dewanjee, Dave Riggs, Norman Robson, Ian Melville, Rod Augur, Robert Fox, Vikas Gupta, Anthony Yu, Ken Giewont, John Pellerin, Ted Letavic
Summary: Enabling cost-effective and power-efficient laser source on a silicon photonics (SiPh) platform is a major goal. In this study, we achieved hybrid flip-chip integration of III-V lasers on a 300-mm monolithic SiPh platform. We demonstrated efficient laser-to-SiPh-circuit butt-coupling with optical power up to 20 mW and characterized key performance metrics after laser integration. Additionally, we explored alternative spot-size converters to enhance coupling efficiency and relaxed fabrication tolerance.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2023)
Editorial Material
Optics
Junjie Yang, Mingchu Tang, Siming Chen, Huiyun Liu
Summary: The realization of on-chip light sources enables the complete integration of Si-based photonic integrated circuits (PICs).
LIGHT-SCIENCE & APPLICATIONS
(2023)
Article
Materials Science, Multidisciplinary
Xingchao Zhang, Yunkun Yang, Hongxi Zhou, Xianchao Liu, Rui Pan, He Yu, Jun Gou, Zhiming Wu, Jiang Wu, Faxian Xiu, Yi Shi, Jun Wang
Summary: This study developed an ultra-low-noise-level PD linear array based on a 3D Dirac semimetal (Cd1-xZnx)(3)As-2/Sb2Se3 heterojunction. The PD exhibited outstanding photodetection capacity from the visible to mid-infrared region, with high SNR, peak specific detectivity, and response speed. It also demonstrated long-term stability and uniformity, showing great potential for advanced optoelectronic applications.
SCIENCE CHINA-MATERIALS
(2023)
Article
Physics, Applied
Hui Jia, Xuezhe Yu, Taojie Zhou, Calum Dear, Jiajing Yuan, Mingchu Tang, Zhao Yan, Bogdan-Petrin Ratiu, Qiang Li, Alwyn Seeds, Huiyun Liu, Siming Chen
Summary: In this paper, the authors report the results of long-wavelength microdisk lasers based on five stacks of self-assembled InAs/InAlGaAs quantum dots. These quantum dots were grown on an InP (001) substrate using solid-source molecular beam epitaxy. The 8.4-micron diameter quantum dot microdisk laser operated at room temperature under pulsed optically pumping conditions. The experimental results achieved multi-wavelength lasing emissions at around 1.6 microns with a low threshold of 30 μW and a quality factor of approximately 1336. The demonstrated long-wavelength lasers with low threshold and compact size have potential applications in integrated gas detection and highly localized label-free biological and biochemical sensing.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Daqian Guo, Jian Huang, Mourad Benamara, Yuriy I. Mazur, Zhuo Deng, Gregory J. Salamo, Huiyun Liu, Baile Chen, Jiang Wu
Summary: We successfully integrated submonolayer quantum dot quantum cascade detectors (SML QD QCDs) on Si substrates via direct growth, reducing the threading dislocation density to a record level. High-quality InGaAs/GaAs SML QDs were observed on silicon for the first time. The as-grown SML QD QCDs on Si exhibited a normal incident photoresponse temperature up to 160 K, indicating their potential for scalable and affordable photodetectors and infrared focal plane arrays.
IEEE JOURNAL OF QUANTUM ELECTRONICS
(2023)
Article
Engineering, Electrical & Electronic
Yi Wang, Victor Dolores-Calzadilla, Kevin A. Williams, Meint K. Smit, Yuqing Jiao
Summary: This paper presents the development of ultra-compact, efficient, and broadband electro-optic phase shifters using a sub-micron-thick InP membrane. This work contributes to the further miniaturization of photonic integrated circuits and enables applications such as optical computing, switching, and sensing.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2023)
Article
Optics
Yaonan Hou, Ilias Skandalos, Mingchu Tang, Hui Jia, Huiwen Deng, Xuezhe Yu, Yasir Noori, Spyros Stathopoulos, Siming Chen, Huiyun Liu, Alwyn Seeds, Graham Reed, Frederic Gardes
Summary: We investigate the surface and interface engineering on InAs quantum dot emitters using edge-emitting light-emitting diodes encapsulated with non-stoichiometric silicon nitride (SiN) layers. Our findings show that silicon-rich SiN is an excellent choice for both electrical and optical passivation, reducing surface recombination. However, N-rich SiN deposited by the same method does not provide effective passivation under electrical injection. This research provides important insights for the monolithic integration of InAs quantum dot emitters with CMOS photonics components.
JOURNAL OF LUMINESCENCE
(2023)
Article
Physics, Applied
F. T. Albeladi, S. Gillgrass, J. Nabialek, P. Mishra, R. Forrest, T. R. Albiladi, C. P. Allford, H. Deng, M. Tang, H-y Liu, S. Shutts, P. M. Smowton
Summary: InAs quantum dot ridge waveguide lasers with single-port multi-mode-interference-reflectors (MMIR) and single-cleaved reflectors were designed, fabricated, and characterized for optoelectronic-integrated-circuits. Simulations showed high fundamental mode reflectivity (> 80%) and good selectivity against higher order modes. The deep-etched MMIR lasers with 0.5 mm long cavities had a lower threshold current of 24 mA compared to standard Fabry-Perot cleaved-cleaved FP-RWG lasers of the same length at 25 degrees C, and 56 mA compared to 102 mA at 55 degrees C. The MMIR lasers exhibited stable ground state operation up to 50 degrees C and showed potential as small footprint sources for integrated photonics.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Optics
Victoria Cao, Shujie Pan, Yulong Fan, Dingyi Wu, Mingchu Tang, Alwyn Seeds, Huiyun Liu, Xi Xiao, Siming Chen
Summary: Using QD technology, ultra-fast and distortion-free amplification of high-speed pulse trains from ML-OFC sources is achieved. The use of identical QD materials for both photonic devices allows for the integration of ML-OFCs, SOAs, and other components on the same QD-based epi-wafer, paving the way for advanced photonic chips in the future.
Article
Physics, Applied
Manyu Dang, Huiwen Deng, Suguo Huo, Raghavendra R. Juluri, Ana M. Sanchez, Alwyn J. Seeds, Huiyun Liu, Mingchu Tang
Summary: The monolithic integration of III-V optoelectronic devices on the Si platform is becoming popular due to its advantages of low cost, less complexity, and high yield for mass production. This paper investigates different dislocation filter layers (DFLs) for reducing the threading dislocation density (TDD) in GaAs buffer layers on Si substrates. The InAlGaAs asymmetric step-graded buffer layer (ASG) shows the lowest TDD value and surface roughness. Further optimization of the InAlGaAs ASG through thermal cyclic annealing achieves a low surface TDD for a 2 & mu;m GaAs/InAlGaAs ASG buffer layer grown on Si.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Optics
Jingwen Ma, Taojie Zhou, Mingchu Tang, Haochuan Li, Zhan Zhang, Xiang Xi, Mickael Martin, Thierry Baron, Huiyun Liu, Zhaoyu Zhang, Siming Chen, Xiankai Sun
Summary: This study successfully realizes topological Dirac-vortex microcavity lasers on a silicon substrate and observes room-temperature continuous-wave linearly polarized vertical laser emission. These lasers exhibit topological robustness, maintaining a stable wavelength despite variations in the cavity size, and their free spectral range does not follow the universal inverse scaling law with the cavity size.
LIGHT-SCIENCE & APPLICATIONS
(2023)