期刊
2D MATERIALS
卷 5, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aac65e
关键词
alpha-MoO3; controllable growth; large-area atomic crystal; anisotropy; optoelectronic
资金
- National Natural Science Foundation of China [61622406, 11674310, 51633006, 61571415, 51502283, 91433115]
- Ministry of Science and Technology of China [2017YFA0207500, 2016YFB04001100, 2014CB643600, 2013CB933403, 2013CB933500]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDPB0603, XDB12030300]
- 'Hundred Talents Program' of Chinese Academy of Sciences (CAS)
- CAS/SAFEA International Partnership Program for Creative Research Teams
Orthorhombic MoO3 (alpha-MoO3) is a typical layered n-type semiconductor with optical band gap over 2.7 eV, which have been widely studied in catalysis, gas sensing, lithium-ion batteries, field-emission, photoelectrical, photochromic and electrochromic devices, supercapacitors and organic solar cells. However, the bottleneck of generation large size atomic thin two-dimensional (2D) alpha-MoO3 crystals remain challenging this field (normally several micrometers size). Herein, we developed a facile vapor-solid (VS) process for controllable growth of large-size 2D alpha-MoO3 single crystals with a few nanometers thick and over 300 mu m in lateral size. High-performance solar-blind photodetectors were fabricated based on individual 2D alpha-MoO3 single crystal. The detectors demonstrate outstanding optoelectronic properties under solar-blind UV light (254 nm), with a photoresponsivity of 67.9 A W-1, external quantum efficiency of 3.3 x 10(4)%. More important, the devices showed strong in-plane anisotropy in optoelectronic response and transport properties, e.g. the photocurrent along b-axis was found to be 5 times higher than the values along c-axis under 254 nm UV light, and current ON/OFF ratio and mobility anisotropy is about 2 times high. Our work suggests an optimized synthesis routine for 2D crystals, and the great potential of 2D oxides in functional optoelectronics.
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