期刊
2D MATERIALS
卷 5, 期 3, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/2053-1583/aac96b
关键词
TMDCs; piezoelectricity; p-n homojunction; piezo-phototronic effect; enhanced photoresponse
资金
- National Key R & D Project from Minister of Science and Technology, China [2016YFA0202703, 2016YFA0202704]
- NSFC [51472056]
- 'thousands talents' Program for Pioneer Researcher and Their Innovation Team, China
- Recruitment Program of Global Youth Experts, China
Transition-metal dichalcogenides (TMDCs) have recently open a new perspective in electronics and optoelectronics due to their unique planar crystal structures and incredible physical characteristics. Strong in-plane piezoelectricity is their unique property owing to non-centrosymmetric structure, differing from other two dimension (2D) materials, such as graphene and black phosphorus. In this work, we develop a flexible photodiode based on monolayer MoS2 lateral p-n homojunction with significant enhancement in photoresponsivity and detectivity. Piezo-phototronic effect is used to achieve this enhancement by adjusting the barrier height and broadening depletion zone at p-n junction interface under external strain. The wider depletion zone benefits the separation and transport of photogenerated carriers, thus enhancing the photocurrent. When a 0.51% external static tensile strain was applied, the photoresponsivity and detectivity are improved up to 1162 A W-1 and 1.72 x 10(12) Jones, with about 619% and 319% enhancement compared with strain-free state, respectively. Consequently, this work provides an effective strategy to utilize unavoidable external strain to improve TMDCs-based optoelectronic devices performance. At the same time, it has reference meaning to achieve flexible, low-consumption and high-performance 2D devices without electric gate-control.
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