1T phase as an efficient hole injection layer to TMDs transistors: a universal approach to achieve p-type contacts

标题
1T phase as an efficient hole injection layer to TMDs transistors: a universal approach to achieve p-type contacts
作者
关键词
-
出版物
2D Materials
Volume 5, Issue 3, Pages 031012
出版商
IOP Publishing
发表日期
2018-05-29
DOI
10.1088/2053-1583/aac859

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