期刊
2D MATERIALS
卷 5, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/aad2ba
关键词
two-dimensional semiconductor; physical vapor deposition; molybdenum trioxide; Raman anisotropy; photoresponse
资金
- National Natural Science Foundation of China [51372033, 21773024]
- National High Technology Research and Development Program of China [2015AA034202]
Centimeter-sized 2D layered alpha-MoO3 single crystal has been grown by a facile physical vapor deposition method. The lateral size of alpha-MoO3 single crystals can be tunable from micrometer to centimeter by controlling the inner diameter of the quartz tube reaction chamber. The as-grown alpha-MoO3 exhibits strong in-plane Raman anisotropy, where A(g) Raman modes give the direction of crystallographic orientation, which can be used to rapidly and precisely identify the crystallinity of large-area alpha-MoO3 through selected-area angel-resolved polarized Raman spectroscopy. Moreover, the photodetectors based on annealed alpha-MoO3 single crystals exhibit excellent optoelectronic performance with a photoresponsivity of 65.6 A W-1 and a fast photoresponse time of 2 s.
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