Article
Engineering, Electrical & Electronic
Ahmad Echresh, Slawomir Prucnal, Zichao Li, Rene Huebner, Fabian Ganss, Oliver Steuer, Florian Baerwolf, Shima Jazavandi Ghamsari, Manfred Helm, Shengqiang Zhou, Artur Erbe, Lars Rebohle, Yordan M. Georgiev
Summary: Accurate control of doping and fabrication of metal contacts on n-type germanium nanowires (GeNWs) remain challenging in germanium-based nanoelectronics. This study presents a combined approach involving phosphorus implantation, flash lamp annealing, electron beam lithography, reactive ion etching, and nickel deposition to fabricate Ohmic contacts on n-type doped GeNWs. The resulting devices showed linear Ohmic behavior in current-voltage measurements, and the electrical characteristics were found to be affected by carrier scattering and reduction of the effective NW cross-section.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Physical
F. Komarov, I. Parkhomenko, A. Alzhanova, T. Wang, K. Zhussupbekov, A. Zhussupbekova, I. Shvets, E. Wendler, S. Berman, O. Milchanin
Summary: In this study, silicon layers hyperdoped with selenium were formed through Se implantation followed by pulsed laser annealing. The distribution of Se atoms and the formation of intermediate sub-band within the Si band gap were investigated. The experimental and theoretical sub-band properties were compared, and a significant increase in light absorption across a wide spectral region was observed, demonstrating the potential of selenium hyperdoping for enhancing infrared absorption in silicon.
APPLIED SURFACE SCIENCE
(2023)
Review
Chemistry, Physical
Chao Li, Ji-Hong Zhao, Zhan-Guo Chen
Summary: This review focuses on the infrared absorption and detection mechanism of hyper-doped silicon achieved by ion implantation and pulsed laser annealing. It emphasizes the impact of chalcogens and transition metals on the infrared absorption properties of hyper-doped silicon. The latest research on the responsivity and external quantum efficiency of photodetectors based on hyper-doped silicon is reviewed, along with suggestions for improving infrared absorption and device performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Physics, Multidisciplinary
Juanmei Duan, Changan Wang, Lasse Vines, Lars Rebohle, Manfred Helm, Yu-Jia Zeng, Shengqiang Zhou, Slawomir Prucnal
Summary: Ion implantation of S and Te followed by sub-second flash lamp annealing with peak temperature about 1100 degrees C is utilized to obtain metallic n (++)-GaAs layers, with electron concentration as high as 5 x 10(19) cm(-3). Heavily doped n (++)-GaAs exhibits positive magnetoconductance attributed to magnetic field suppressed weak localization in the temperature range of 3-80 K. The phase coherence length is found to increase with carrier concentration at low temperature and follows a temperature dependence of l ( null ) proportional to T ( eta ) (eta similar to 0.3), indicating defect-related scattering as the dominant dephasing mechanism.
NEW JOURNAL OF PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Zichao Li, Ye Yuan, Rene Hubner, Viktor Begeza, Thomas Naumann, Lars Rebohle, Olav Hellwig, Manfred Helm, Kornelius Nielsch, Slawomir Prucnal, Shengqiang Zhou
Summary: Researchers successfully prepared B20-MnSi films on Si(100) substrates, offering better conditions for practical applications. The regrown layer exhibits a higher Curie temperature compared to bulk material, and the magnetic skyrmion signature was confirmed through magnetic and transport measurements. Flash-lamp annealing in the millisecond range shows promise for fabricating Si-based skyrmionic devices.
MATERIALS TODAY PHYSICS
(2021)
Article
Nanoscience & Nanotechnology
Zichao Li, Ye Yuan, Rene Huebner, Lars Rebohle, Yan Zhou, Manfred Helm, Kornelius Nielsch, Slawomir Prucnal, Shengqiang Zhou
Summary: In this study, pure B20-CoSi thin films were successfully grown using millisecond-range flash-lamp annealing, and the phenomena of charge density wave and chiral anomaly were observed. This work presents a promising method for preparing thin films of other binary B20 transition-metal silicides.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Materials Science, Multidisciplinary
Mao Wang, Eric Garcia-Hemme, Yonder Berencen, Rene Huebner, Yufang Xie, Lars Rebohle, Chi Xu, Harald Schneider, Manfred Helm, Shengqiang Zhou
Summary: A comprehensive study of a room-temperature MWIR photodetector based on Si hyperdoped with Te was conducted, showing spectral photoresponse up to 5 μm. The detector exhibited slightly lower performance than commercial devices in the wavelength range of 1.0-1.9 μm.
ADVANCED OPTICAL MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
D. Skarlatos, D. Velessiotis, M. C. Skoulikidou, V. Ioannou-Sougleridis, N. Z. Vouroutzis, J. Stoemenos
Summary: The study investigates and discusses the surface damage induced in ion-implanted Ge after flash lamp annealing, showing that nitrogen co-implantation significantly enhances the robustness of the Ge surface layer. This enhancement may extend the thermal budget envelope of flash lamp annealing, potentially useful for achieving higher levels of donor activation in Ge.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Nanoscience & Nanotechnology
Heera Menon, Lasse Sodergren, Robin Athle, Jonas Johansson, Matthew Steer, Iain Thayne, Mattias Borg
Summary: Monolithic integration of III-V semiconductors with Silicon technology has opened up new possibilities in the semiconductor industry, with rapid melt growth (RMG) being a promising CMOS compatible integration process. This paper presents a study on ultra-thin InSb-on-insulator microstructures integrated on a Si platform using a RMG-like process. Recrystallization of InSb was achieved through flash lamp annealing (FLA), resulting in improved electrical resistivity and potential for monolithic mid-infrared detectors and quantum devices.
Article
Physics, Applied
Hiroshi Oka, Wataru Mizubayashi, Yuki Ishikawa, Noriyuki Uchida, Takahiro Mori, Kazuhiko Endo
Summary: Flash lamp annealing was found to significantly promote solid-phase growth (SPG) of GeSn layer deposited on a Ge-on-insulator wafer, with the diffusion of Sn during SPG completely suppressed. The resulting GeSn/Ge-on-insulator wafer showed improved infrared absorption beyond 2000 nm, making it a suitable platform for near-infrared image sensors based on group-IV materials.
APPLIED PHYSICS EXPRESS
(2021)
Article
Chemistry, Physical
Zhe-Yi Ren, Ji -Hong Zhao, Chao Li, Zhan-Guo Chen, Qi-Dai Chen
Summary: Hyperdoping technique introduces transition metals into silicon to enable silicon to operate in infrared wavebands, improving its infrared detection performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Physics, Applied
Zheng Wang, Huynh Thi Cam Tu, Keisuke Ohdaira
Summary: Flash lamp annealing (FLA) is a short-duration annealing technique that can crystallize amorphous silicon (a-Si) films for thin-film polycrystalline Si (poly-Si) solar cells. The crystallization of n-type hydrogenated a-Si (n-a-Si:H) films on Si nitride-coated textured glass substrates was investigated using FLA. The results showed that FLA can successfully crystallize the films without film peeling, even without chromium adhesion layers.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
Shannan Chang, Jiajing He, Slawomir Prucnal, Jieyin Zhang, Jianjun Zhang, Shengqiang Zhou, Manfred Helm, Yaping Dan
Summary: In this work, a delta-doping layer was formed in silicon by using flash lamp annealing to treat PCl3 monolayers grafted on silicon surfaces. The atomically thin (<1 nm) delta-doping layer exhibited a metallic state with a weak localization phenomenon, indicating the formation of a two-dimensional electron gas. By forming such an n-type delta-doping layer on a highly doped p-type Si substrate, a highly sensitive solar-blind UV photodetector was created.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Applied
Hiroshi Oka, Wataru Mizubayashi, Yuki Ishikawa, Noriyuki Uchida, Takahiro Mori, Kazuhiko Endo
Summary: This paper describes the use of flash lamp annealing (FLA) to fabricate high-Sn content GeSn n-MOSFETs, achieving high Sn incorporation and high-quality n(+)-source/drain junctions. Transistor operation of the SPG-Ge0.88Sn0.12 n-MOSFETs showed significantly improved performance compared to conventional rapid thermal annealing processing.
APPLIED PHYSICS EXPRESS
(2021)
Article
Chemistry, Physical
Xubin Chen, Jordi Sastre, Abdessalem Aribia, Evgeniia Gilshtein, Yaroslav E. Romanyuk
Summary: Flash lamp annealing (FLA) is explored for crystallizing LiCoO2 (LCO) cathodes on aluminum foils, achieving rapid heating of LCO films up to 900 degrees C while avoiding aluminum melting. Microbatteries fabricated using this method on flexible aluminum foil exhibit performance comparable to those on rigid silicon, offering potential for new microbattery designs at lower production costs.
ACS APPLIED ENERGY MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Himani Arora, Zahra Fekri, Yagnika Nandlal Vekariya, Phanish Chava, Kenji Watanabe, Takashi Taniguchi, Manfred Helm, Artur Erbe
Summary: In this study, a fully-encapsulated BP-based field-effect transistor (FET) scheme is employed using a lithography-free via-encapsulation method. The electrical properties of the via-encapsulated BP FETs are found to be significantly improved compared to unencapsulated devices. The results demonstrate that the via-contacting scheme leads to superior performance in terms of higher mobility, lower hysteresis, and long-term ambient stability in BP FETs.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Chemistry, Physical
Shan Wang, Luca Scandurra, Rene Huebner, Ulla Gro Nielsen, Changzhu Wu
Summary: Chemoenzymatic cascades are important tools for advanced synthesis in chemistry. In this study, a simple method combining particle catalysts and enzymes in water and Pickering emulsions was successfully presented, enabling chemoenzymatic cascades. The particle catalysts acted as asymmetric catalysts for the first-step reaction and as an emulsifier to form stable Pickering emulsions. The second-step reaction of enantioselective acylation was achieved by adding Candida antarctica lipase B into the emulsions. This method has potential for generalizing to other cascade syntheses with different chemo- and biocatalysts in the future.
Article
Physics, Condensed Matter
O. Steuer, D. Schwarz, M. Oehme, J. Schulze, R. Kudrawiec, I. A. Fischer, R. Heller, R. Huebner, M. M. Khan, Y. M. Georgiev, S. Zhou, M. Helm, S. Prucnal
Summary: In this article, strain and band-gap engineering in Ge1-x Sn (x) alloys grown on Ge virtual substrate using post-growth nanosecond pulsed laser melting (PLM) is presented. The initial in-plane compressive strain is removed, and the Ge0.89Sn0.11 layer becomes tensile strained for PLM energy densities higher than 0.5 J cm(-2). The crystalline quality and Sn-distribution in PLM-treated Ge0.89Sn0.11 layers are only slightly affected, and the change of the band structure after PLM is confirmed.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2023)
Article
Chemistry, Multidisciplinary
Xing Huang, Shuai Fu, Cong Lin, Yang Lu, Mingchao Wang, Peng Zhang, Chuanhui Huang, Zichao Li, Zhongquan Liao, Ye Zou, Jian Li, Shengqiang Zhou, Manfred Helm, Petko St. Petkov, Thomas Heine, Mischa Bonn, Hai I. Wang, Xinliang Feng, Renhao Dong
Summary: In this study, a strategy for synthesizing high-mobility semiconducting conjugated coordination polymers (c-CPs) using novel conjugated ligands with D2h symmetry was demonstrated. The reduced symmetry of the 4 + 2 ligands compared to conventional phenyl ligands led to anisotropic coordination in the formation of c-CPs. A single-crystalline three-dimensional (3D) c-CP Cu4DHTTB with orthogonal ribbon-like pi-d conjugated chains was successfully achieved. This c-CP exhibited a small band gap, dispersive energy bands, and high charge carrier mobilities, laying the foundation for high-performance c-CP-based (opto-)electronics.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
(2023)
Article
Engineering, Electrical & Electronic
Mao Wang, M. S. Shaikh, U. Kentsch, R. Heller, Shengqiang Zhou
Summary: Single-crystalline Mg-implanted Si layers were synthesized through ion implantation and pulsed laser melting. The Mg doping concentration reached 10(21) cm(-3). Recrystallization of the Mg-implanted Si layer was confirmed by Raman, Rutherford backscattering spectrometry/channeling, and particle-induced x-ray emission measurements. The Mg-implanted Si layers exhibited strong below band gap infrared absorption in the mid-infrared range, which was attributed to deep levels induced by high implantation levels of Mg atoms. This study highlights the potential of Mg-implanted Si for room-temperature light detection in a broad infrared range for Si-based photonics.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Chemistry, Multidisciplinary
Mingchao Wang, Gang Wang, Chandrasekhar Naisa, Yubin Fu, Sai Manoj Gali, Silvia Paasch, Mao Wang, Haiko Wittkaemper, Christian Papp, Eike Brunner, Shengqiang Zhou, David Beljonne, Hans-Peter Steinrueck, Renhao Dong, Xinliang Feng
Summary: The study reports a 2D c-COF electrode material that can store protons rapidly in mild aqueous electrolyte and strong acid. The unique proton affinity mechanism of the 2D c-COF is revealed, and the outstanding rate capability is demonstrated.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2023)
Article
Physics, Applied
Moritz Hoesch, Olena Fedchenko, Mao Wang, Christoph Schlueter, Dmitrii Potorochin, Katerina Medjanik, Sergey Babenkov, Anca S. Ciobanu, Aimo Winkelmann, Hans-Joachim Elmers, Shengqiang Zhou, Manfred Helm, Gerd Schoenhense
Summary: Multiple dopant configurations of Te impurities in silicon are investigated using various techniques. Strong chemical core level shifts distinguish these configurations from isolated impurities. Multi-Te configurations, such as dimers or Te ions surrounding a vacancy, are clearly identified. The results contribute to understanding the exceptional activation of free charge carriers in hyperdoping of chalcogens in silicon.
APPLIED PHYSICS LETTERS
(2023)
Article
Environmental Sciences
Stephan Hilpmann, Henry Moll, Bjoern Drobot, Manja Vogel, Rene Huebner, Thorsten Stumpf, Andrea Cherkouk
Summary: The interaction between the lanthanide Eu(III) and a sulfate-reducing microorganism was investigated, revealing a complex mechanism involving lactate complexation and bioprecipitation with phosphates excreted from the cells.
ECOTOXICOLOGY AND ENVIRONMENTAL SAFETY
(2023)
Article
Physics, Applied
Juanmei Duan, Maciej O. Liedke, Wojciech Dawidowski, Rang Li, Maik Butterling, Eric Hirschmann, Andreas Wagner, Mao Wang, Lawrence Boyu Young, Yen-Hsun Glen Lin, Minghwei Hong, Manfred Helm, Shengqiang Zhou, Slawomir Prucnal
Summary: In this study, the effect of intense pulsed light melting on defect distribution and activation efficiency in chalcogenide-implanted GaAs was investigated. The results showed that after nanosecond pulsed light melting, the main defects in heavily doped GaAs are gallium vacancies decorated with chalcogenide atoms substituting As.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Engineering, Electrical & Electronic
Christian D. Matthus, Phanish Chava, Kenji Watanabe, Takashi Taniguchi, Thomas Mikolajick, Manfred Helm, Artur Erbe
Summary: In this study, we demonstrated the usability of a fully 2D-materials based device as a temperature sensor for linear temperature measurement at cryogenic temperatures. By applying different temperatures to the device and recording the I-V characteristics, we found that the main current flows through the device when it is reversely biased, contrary to classical expectation. We also investigated the temperature-sensor performance by applying a constant current to the device and measuring the voltage drop at different temperatures.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2023)
Article
Chemistry, Multidisciplinary
Xing Huang, Shuai Fu, Cong Lin, Yang Lu, Mingchao Wang, Peng Zhang, Chuanhui Huang, Zichao Li, Zhongquan Liao, Ye Zou, Jian Li, Shengqiang Zhou, Manfred Helm, Petko St Petkov, Thomas Heine, Mischa Bonn, Hai I. Wang, Xinliang Feng, Renhao Dong
Summary: This study demonstrates a strategy for synthesizing high-mobility semiconducting coordination polymers (c-CPs) using novel conjugated ligands with reduced symmetry. The synthesized c-CPs exhibit a small band gap, dispersive energy bands, and high charge carrier mobilities, outperforming previously reported conductive coordination polymers. This molecular design strategy lays the foundation for achieving high-performance c-CP-based (opto-)electronics.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
J. Michael Klopf, Igor Ilyakov, Alexey Ponomaryov, Alexej Pashkin, Jan-Christoph Deinert, Thales V. A. G. de Oliveira, Pavel Evtushenko, Manfred Helm, Stephan Winnerl, Sergey Kovalev
Summary: The free-electron laser (FEL) is an ideal source of high-power coherent THz radiation. However, the carrier envelope phase (CEP) of FEL pulses is not fixed, making measurements of coherent THz-driven processes difficult. This paper presents a novel technique that enables real-time measurement of the CEP of every FEL pulse, providing possibilities for the study of coherent THz-driven phenomena and advanced diagnostics for CEP stable operation of an FEL.
2023 48TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, IRMMW-THZ
(2023)
Article
Geochemistry & Geophysics
Asim Siddique, Peter Boelens, Fangchao Long, Shengqiang Zhou, Veerle Cnudde, Thomas Leissner
Summary: Magnetic separation plays a crucial role in mineral processing and recycling industries. This study proposes a methodology to comprehensively characterize and classify Waste Electrical and Electronic Equipment (WEEE) slag, aiming to establish the connection between slag properties and the separation process. The methodology involves sieving, classification based on magnetic susceptibility, and mineral liberation analysis. This in-depth analysis provides insights into the separation behavior of different slag phases, contributing to the development of predictive separation models.
Article
Chemistry, Multidisciplinary
Xiaoyue Shi, Yiqi Ling, Youcong Li, Guanhua Li, Juan Li, Lingwei Wang, Fanhong Min, Rene Huebner, Shuai Yuan, Jinhua Zhan, Bin Cai
Summary: This study presents a novel approach for achieving complete glucose electrooxidation using a Cu-based metal-hydroxide-organic framework, which exhibits significantly improved electrocatalytic activity and enables the exclusive oxidation of glucose into formate and carbonate. A high-performance nonenzymatic glucose sensor was also developed. This work provides a new molecule-level strategy for designing catalytically active sites and has potential implications for the development of next-generation electrochemical devices.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2023)
Article
Chemistry, Multidisciplinary
Johannes Kresse, Maximilian Georgi, Rene Huebner, Alexander Eychmueller
Summary: The physical properties of nanomaterials are determined by their structural features, and accurate structural control is essential for applications such as metal aerogels. In this study, Au-Ni aerogels with different morphologies including alloys, heterostructures, and hollow spheres were successfully synthesized. The morphology of the aerogels directly affected their physisorption behavior and was related to their structural features and physicochemical properties.
NANOSCALE ADVANCES
(2023)