Impact-Ionization and Tunneling FET Characteristics of Dual-Functional Devices With Partially Covered Intrinsic Regions

出版年份 2015 全文链接

标题

作者

关键词

出版物

Volume 14, Issue 4, Pages 633-637

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2015-04-30

DOI

10.1109/tnano.2015.2427453

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started