Article
Multidisciplinary Sciences
Iman Chahardah Cherik, Saeed Mohammadi
Summary: This article presents a novel dielectric-modulated biosensor based on a tunneling field-effect transistor. It comprises a dual doping-less tunneling junction that lies above an n(+) drain region. Numerical simulations show that including trap-assisted tunneling significantly modulates the biosensor's main parameters and corresponding sensitivities. The proposed biosensor demonstrates promising performance with various configurations, as demonstrated by FOMs like I-on/I-off = 2.04 x 10(6), S-Ids =1.48 x 10(5), and S-SS=0.61 in the presence of TAT.
SCIENTIFIC REPORTS
(2023)
Article
Computer Science, Information Systems
Lubna Majeed, Syed Intekhab Amin, Zuber Rasool, Ishrat Bashir, Naveen Kumar, Sunny Anand
Summary: A dual-gate organic field effect transistor (DG-OFET)-based pH sensor is proposed for detecting variations in aqueous medium. The change in ON-current was observed by examining electrolytes in two gates underlapping the structure. Numerical simulations showed that the proposed DG-OFET has significantly higher sensitivity, especially with high-k dielectrics.
Article
Chemistry, Analytical
Yi Yang, Zicheng Lu, Duo Liu, Yuelin Wang, Shixing Chen, Tie Li
Summary: SiNWs-FET sensors with triangular cross-sections have the highest surface-to-volume ratio and depletion ratio, leading to enhanced sensitivity; manufacturing processes like EBL and CVD can affect sensor sensitivity, while WETO methods result in fewer surface defects and higher quality lattices.
Article
Biophysics
Mohammed Sedki, Yu Shen, Ashok Mulchandani
Summary: Field-effect transistors (FETs) are a promising platform for biosensors, particularly with the use of 1D and 2D materials to achieve high sensitivity and single molecule detection. This review focuses on the structure, properties, synthesis, and biofunctionalization of these nanomaterials, as well as summarizing the progress and challenges of 1D/2D-FET biosensors in North America over the past decade.
BIOSENSORS & BIOELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Abbas Panahi, Morteza Ghafar-Zadeh, Anthony Scime, Sebastian Magierowski, Ebrahim Ghafar-Zadeh
Summary: This article presents a novel open gate junction field-effect transistor (OG-JFET)-based sensor for monitoring DNA storage. The proposed sensor demonstrates a linear response towards DNA concentration and shows promising sensitivity and potential for biotechnology applications.
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
(2022)
Article
Engineering, Electrical & Electronic
Praveen Dwivedi, Rohit Singh, Yogesh Singh Chauhan
Summary: This work investigates the underlap structure of a TFET with electrolyte/watery solution to enhance sensitivity beyond the Nernst limit, achieving a voltage sensitivity of 180 mV/pH and a current sensitivity greater than one decade per pH. Results show that the TFET outperforms the IM device, demonstrating its potential as a promising alternative for future biosensors.
IEEE SENSORS JOURNAL
(2021)
Article
Chemistry, Physical
Yanmei Sun, Nian He, Qi Yuan, Yufei Wang, Yan Dong, Dianzhong Wen
Summary: The study explores the role of ferroelectric polarization in modulating the channel polarity of carbon nanotube transistors to construct synaptic components with reconfigurable polarity. By using a modulating channel method, the components are able to perform both STDP and anti-STDP functions based on reward and punishment signals, providing a strategy for hardware implementation of reinforcement learning.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2022)
Review
Chemistry, Analytical
Pan Zhang, Yin Xiao, Jingjing Zhang, Bingjie Liu, Xiaofei Ma, Yong Wang
Summary: This comprehensive review discusses recent advances in FET gas sensors based on various materials, including sensor structures, gas-sensing mechanisms, optimization strategies, and key advances in gas sensing performance of the materials. Shortcomings of these materials are also addressed, along with proposed future directions in the field.
ANALYTICA CHIMICA ACTA
(2021)
Article
Engineering, Electrical & Electronic
Hyeon-Tak Kwak, Hyangwoo Kim, Hyeongseok Yoo, Minkeun Choi, Kyounghwan Oh, Yijoon Kim, Byoung Don Kong, Chang-Ki Baek
Summary: Chemical sensors play a vital role in ensuring safety in modern society, from preventing pollution to saving lives. The demand for real-time monitoring of hydrogen fluoride (HF) is increasing due to its high toxicity and widespread use in industries. This study presents a compact HF gas sensor that exhibits high sensitivity and selectivity, utilizing field-effect transistors (FETs) fabricated through a cost-effective and mass-production friendly conventional semiconductor process. The sensor achieves high responsivity and low limit of detection at room temperature, making it a potential candidate for industrial mobile sensor platforms.
IEEE SENSORS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Sandeep Kumar, Balraj Singh, Yashvir Singh
Summary: A 2-D analytical model of a dielectric modulated trench double gate junctionless FET (DM-TDGJLFET) has been developed for label-free detection of biomolecules. The model shows good agreement with simulated data, and the structure has two gates vertically placed in separate trenches for immobilization of biomolecules. The sensitivity of threshold voltage for both neutral and charged biomolecules has been studied, with a significant shift observed for neutral molecules.
IEEE SENSORS JOURNAL
(2021)
Article
Chemistry, Analytical
Jiawei Hu, Yinglu Li, Xufang Zhang, Yanrong Wang, Jing Zhang, Jiang Yan, Junjie Li, Zhaohao Zhang, Huaxiang Yin, Qianhui Wei, Qifeng Jiang, Shuhua Wei, Qingzhu Zhang
Summary: A biosensor based on a silicon nanowire field-effect transistor (SiNW FET) was developed for the quantitative detection of Cys-C. By optimizing the sensor's sensitivity and specificity, it achieved a lower limit of detection (LOD) of 0.25 ag/mL and demonstrated a good linear correlation in the concentration range of 1 ag/mL to 10 pg/mL. This holds great potential for early detection and prevention of acute kidney injury.
Article
Engineering, Electrical & Electronic
Yash Pathak, Bansi Dhar Malhotra, Rishu Chaujar
Summary: This work investigates the double metal below negative capacitance field-effect transistor (DM-belowNCFET) as a biosensor for detecting biomolecules. The results show that the biosensor exhibits extreme sensitivity (1.11) at a low drain voltage (0.4V), making it suitable for low-power, high-density, and high-speed biosensing applications.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Multidisciplinary Sciences
Monika Kumari, Niraj Kumar Singh, Manodipan Sahoo
Summary: An analytical model is developed for a DM-DG-TMD-FET-based Biosensor considering Fringing-field effects. The model is validated for two different device structures and agrees with numerical quantum simulation results. The sensitivity of the biosensors to the presence/absence of biomolecules is studied and compared for different device structures and partially filled cavities. The optimized device dimensions are also considered to enhance the sensitivity. The proposed biosensor is benchmarked against contemporary biosensors and shows superior sensitivity.
SCIENTIFIC REPORTS
(2022)
Article
Engineering, Electrical & Electronic
Lingyao Meng, Junming Zhang, Xixi Yuan, Maolong Yang, Bo Wang, Liming Wang, Ningning Zhang, Maliang Liu, Zhangming Zhu, Huiyong Hu
Summary: This article introduces a high-sensitivity FET photodetector based on WS2, which improves the photosensitivity of WS2 through avalanche multiplication. By using graphene as an electrode, the avalanche breakdown voltage of the device is reduced, resulting in a higher electric field intensity in the WS2 channel. Experimental results show that the detector has ultralow dark current, high responsivity, and high detectivity.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Biochemical Research Methods
Shazia Rashid, Faisal Bashir, Farooq A. Khanday, M. Rafiq Beigh
Summary: In this work, an improved sensitivity L-Shaped Schottky Barrier FET biosensing device is demonstrated. The device utilizes dual material gate with different work functions and Hafnium Oxide as the gate dielectric. The electrical characteristics of biomolecules modulate the Schottky Barrier width, leading to changes in the device's current. Comparative analysis with conventional devices reveals better sensitivity performance in the proposed device for both neutral and charged biomolecules, as well as improvements in sensitivity parameters and selectivity. Additionally, the proposed device shows better sensitivity performance at low and high temperatures compared to state-of-the-art biosensing devices.
IEEE TRANSACTIONS ON NANOBIOSCIENCE
(2022)
Article
Chemistry, Analytical
Tse-Yu Tai, Anirban Sinha, Indu Sarangadharan, Anil Kumar Pulikkathodi, Shin-Li Wang, Geng-Yen Lee, Jen-Inn Chyi, Shu-Chu Shiesh, Gwo-Bin Lee, Yu-Lin Wang
ANALYTICAL CHEMISTRY
(2019)
Article
Physics, Applied
Indraneel Sanyal, Yen-Chang Lee, Yu-Chih Chen, Jen-Inn Chyi
APPLIED PHYSICS LETTERS
(2019)
Article
Chemistry, Physical
Hsin-Ying Lee, Day-Shan Liu, Jen-Inn Chyi, Edward Yi Chang, Ching-Ting Lee
Summary: A double-channel Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN heterostructured-MOSHEMTs with superior gate control capability and low noise power density was fabricated using laser interference photolithography and vapor cooling condensation systems.
Article
Chemistry, Physical
Hsin-Ying Lee, Ying-Hao Ju, Jen-Inn Chyi, Ching-Ting Lee
Summary: In this study, Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN epitaxial layers were grown on silicon substrates using a metalorganic chemical vapor deposition system. The double-channel planar MOSHEMTs exhibited double-hump transconductance behaviors, while the devices with multiple-mesa-fin-channel array showed better gate control capability.
Article
Physics, Applied
Muzafar Ahmad Rather, Loganathan Ravi, Tung-Yuan Yu, Chien-Ting Wu, Kun-Lin Lin, Kun-Yu Lai, Jen-Inn Chyi
Summary: The range of applications of common III-nitride semiconductors (Al, Ga, In)N can be expanded through bandgap engineering via the inclusion of boron and forming heterojunctions. The band alignments of B(Al, Ga)N alloys with common III-nitrides were investigated using x-ray photoemission spectroscopy. Type-I straddling-gap band alignment was identified in the B0.06Ga0.94N/AlN heterojunction, while a type-II band alignment was observed in the B0.06Ga0.94N/GaN heterojunction. Type-I band alignment was deduced for both the B0.13Al0.87N/AlN and B0.13Al0.87N/GaN heterojunctions.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Loganathan Ravi, Muzafar Ahmad Rather, Kun-Lin Lin, Chien-Ting Wu, Tung-Yuan Yu, Kun-Yu Lai, Jen-Inn Chyi
Summary: In this study, h-BN films were grown on 150 mm Si(111) substrates by metal-organic chemical vapor deposition, and the van der Waals epitaxy of GaN on the h-BN films was investigated. Self-exfoliation of GaN films was observed on GaN of thickness 1 μm and more, which was resolved by decreasing the h-BN thickness. Based on the exfoliation behavior, a self-exfoliation mechanism was proposed and an interface binding energy of 54 meV was estimated for the h-BN/AlN interface.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Indraneel Sanyal, En-Shuo Lin, Yu-Chen Wan, Kun-Ming Chen, Po-Tsung Tu, Po-Chun Yeh, Jen-Inn Chyi
Summary: This work demonstrates high-performance AlInGaN/AlN/GaN high electron mobility transistors grown on 150 mm p-type low resistivity silicon substrate with state-of-the-art Johnson's figure-of-merit. The devices achieved high current gain cut-off frequency and power gain cut-off frequency with a three-terminal off-state breakdown voltage, resulting in a high JFOM. The performance of the devices is comparable or better than those on high resistivity silicon and SiC substrates for similar gate length.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
Yu Jie Luo, Indraneel Sanyal, Wei-Chen Tzeng, Yu-Li Ho, Ya-Chun Chang, Chih-Chao Hsu, Jen-Inn Chyi, Chao-Hsin Wu
2020 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA)
(2020)
Article
Engineering, Electrical & Electronic
Niraj Man Shrestha, Yiming Li, Chao-Hsuan Chen, Indraneel Sanyal, Jenn-Hawn Tarng, Jen-Inn Chyi, Seiji Samukawa
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2020)
Article
Nanoscience & Nanotechnology
Chun-Pin Huang, Muzafar Ahmad Rather, Chien-Ting Wu, Ravi Loganathan, Ying-Hao Ju, Kun-Lin Lin, Jen-Inn Chyi, Kun-Yu Lai
ACS APPLIED NANO MATERIALS
(2020)
Article
Engineering, Electrical & Electronic
Yu-Chih Chen, Indraneel Sanyal, Ting-Yu Hu, Ying-Hao Ju, Jen-Inn Chyi
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2020)
Proceedings Paper
Engineering, Electrical & Electronic
Yi-Zhen Liu, Wei-Chih Ho, Indraneel Sanyal, Jen-Inn Chyi
2019 COMPOUND SEMICONDUCTOR WEEK (CSW)
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
Indraneel Sanyal, En-Shuo Lin, Yu-Chen Wan, Jen-Inn Chyi
2019 COMPOUND SEMICONDUCTOR WEEK (CSW)
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
Indraneel Sanyal, Ting-Yu Hu, Yen-Chang Lee, En-Shuo Lin, Jen-Inn Chyi
2019 COMPOUND SEMICONDUCTOR WEEK (CSW)
(2019)
Proceedings Paper
Engineering, Electrical & Electronic
Yu-Chih Chen, Indraneel Sanyal, Jen-Inn Chyi
2019 COMPOUND SEMICONDUCTOR WEEK (CSW)
(2019)