Implementation of Short-Term Plasticity and Long-Term Potentiation in a Synapse Using Si-Based Type of Charge-Trap Memory

出版年份 2015 全文链接

标题

作者

关键词

出版物

Volume 62, Issue 2, Pages 569-573

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2015-01-06

DOI

10.1109/ted.2014.2378758

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