Electrical Characterization of Flexible InGaZnO Transistors and 8-b Transponder Chip Down to a Bending Radius of 2 mm

标题
Electrical Characterization of Flexible InGaZnO Transistors and 8-b Transponder Chip Down to a Bending Radius of 2 mm
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 12, Pages 4063-4068
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2015-11-11
DOI
10.1109/ted.2015.2494694

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