Simulation of Phosphorene Field-Effect Transistor at the Scaling Limit

标题
Simulation of Phosphorene Field-Effect Transistor at the Scaling Limit
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 2, Pages 659-665
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2014-12-19
DOI
10.1109/ted.2014.2377632

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