Mist-CVD Grown Sn-Doped α-Ga2O3 MESFETs

This paper demonstrates the use of cost-effective solution-processed alpha-Ga2O3 thin films (TFs) for electronic device applications. MESFETs based on AgOx Schottky diode (SD) gates were fabricated on highly crystalline Sn-doped alpha-Ga2O3 TFs, grown by mist chemical vapor deposition at atmospheric pressure and a substrate temperature of only 400 degrees C. The rectification ratio and reverse breakdown voltage of typical SDs were 6 x 10(6) and 19.6 V, respectively. The ON-OFF ratio of the corresponding transistors was 2 x 10(7). The MESFETs that could withstand drain voltages of up to 48 V were also realized.