Detailed study of SiO x N y :H/Si interface properties for high quality surface passivation of crystalline silicon

出版年份 2018 全文链接

标题

作者

关键词

Surface passivation, PECVD, Silicon oxynitride, N, H bonds, Interface state density

出版物

Volume 113, Issue -, Pages 13-19

出版商

Elsevier BV

发表日期

2017-07-27

DOI

10.1016/j.spmi.2017.07.052

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