期刊
SOLID-STATE ELECTRONICS
卷 140, 期 -, 页码 139-143出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2017.10.032
关键词
Pt/LaAlO3/Nb-doped SrTiO3 memristor; Synaptic behavior; Thermionic emission; Poole-Frenkel (P-F) emission; Oxygen-content effect; Spike time-dependent plasticity (STDP)
资金
- National Research Foundation of Korea (NRF) Grant - Korean Government (MSIP) [2016R1A5A1012966, 2013R1A3A2042120]
- Ministry of Science, ICT and Future Planning [2016M3A7B4909668, 2011-0030230]
We report the effect of the oxygen content of the LaAlO3 layer on the synaptic behavior in the Pt/LaAlO3/Nb-doped SrTiO3 memristor for neuromorphic applications. As the oxygen-content decreases, the current becomes larger and the spike time-dependent plasticity (STDP) becomes less sensitive to the time difference between preand post-synaptic spike voltage. In addition, the conduction mechanism, which was found to be a combination of thermionic and Poole-Frenkel emissions, and the effect of oxygen content are explained in association with the oxygen vacancy in the LaAlO3 layer. The trade-off between large current and efficient STDP can be controlled by the oxygen content. Furthermore, the results of extracting the synaptic strength-based model parameters indicate that the Pt/LaAlO3/Nb-doped SrTiO3 shows the efficient STDP characteristics in comparison to previously reported memristor materials.
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