Improved performance of InSe field-effect transistors by channel encapsulation

标题
Improved performance of InSe field-effect transistors by channel encapsulation
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 33, Issue 6, Pages 06LT01
出版商
IOP Publishing
发表日期
2018-03-13
DOI
10.1088/1361-6641/aab62b

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