Selective Gas Sensing With $h$ -BN Capped MoS2 Heterostructure Thin-Film Transistors

出版年份 2015 全文链接

标题

作者

关键词

出版物

IEEE ELECTRON DEVICE LETTERS

Volume 36, Issue 11, Pages 1202-1204

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2015-09-24

DOI

10.1109/led.2015.2481388

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IEEE ELECTRON DEVICE LETTERS

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