Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

出版年份 2015 全文链接

标题

作者

关键词

出版物

Volume 36, Issue 6, Pages 549-551

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2015-04-16

DOI

10.1109/led.2015.2421311

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