Black Phosphorus p-MOSFETs With 7-nm HfO2Gate Dielectric and Low Contact Resistance

标题
Black Phosphorus p-MOSFETs With 7-nm HfO2Gate Dielectric and Low Contact Resistance
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 4, Pages 411-413
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2015-02-25
DOI
10.1109/led.2015.2407195

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