In Situ Process Control of Trilayer Gate-Stacks on p-Germanium With 0.85-nm EOT

标题
In Situ Process Control of Trilayer Gate-Stacks on p-Germanium With 0.85-nm EOT
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 36, Issue 9, Pages 881-883
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2015-07-23
DOI
10.1109/led.2015.2459663

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