期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 6, 页码 621-623出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2421948
关键词
Black phosphorus; field effect transistor; amplifier; gain; frequency response
资金
- U.S. Department of Energy (DOE) through the Office of High Energy Physics [DE-AC02-06CH11357]
- U.S. DOE, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division Use of the Center for Nanoscale Materials [DE-AC02-06CH11357]
In this letter, we report an analog small signal amplifier based on semiconducting black phosphorus (BP), the most recent addition to the family of 2D crystals. The amplifier, consisting of a BP load resistor and a BP field-effect transistor (FET), was integrated on a single flake. The gain of the amplifier was found to be similar to 9 and it remained undistorted for input signal frequencies up to 15 kHz. In addition, we also report record high ON current of 200 mu A/mu m at VDD = -0.5 V in the BP FETs. Our results demonstrate the possibility for the implementation of BP in the future generations of analog devices.
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