Article
Engineering, Electrical & Electronic
Ankush Chattopadhyay, Chayanika Bose
Summary: This paper focuses on modeling and examining the suitability of a stacked-gate core-shell junctionless DG-FET for low-power applications. Analytical modeling is used to determine various parameters, and the results match those obtained from device simulation. Comparative analysis shows that the C-S-JL-FET has the largest figures of merit and offers maximum bandwidth and gain.
JOURNAL OF ELECTRONIC MATERIALS
(2023)
Article
Physics, Condensed Matter
Ankush Chattopadhyay, Chandan K. Sarkar, Chayanika Bose
Summary: This paper presents a compact analytical model for the underlap gate stack graded channel junction accumulation mode junctionless FET. The optimal scheme is determined through comparative analysis and further analysis is conducted using a 2D analytical model. The results from the analytical model and simulations show excellent agreement, demonstrating the outstanding ability of the proposed structure to shield short channel effects without compromising performance.
SUPERLATTICES AND MICROSTRUCTURES
(2022)
Article
Engineering, Electrical & Electronic
Sandeep Kumar, Balraj Singh, Yashvir Singh
Summary: A 2-D analytical model of a dielectric modulated trench double gate junctionless FET (DM-TDGJLFET) has been developed for label-free detection of biomolecules. The model shows good agreement with simulated data, and the structure has two gates vertically placed in separate trenches for immobilization of biomolecules. The sensitivity of threshold voltage for both neutral and charged biomolecules has been studied, with a significant shift observed for neutral molecules.
IEEE SENSORS JOURNAL
(2021)
Article
Engineering, Electrical & Electronic
Min Soo Bae, Ilgu Yun
Summary: This article introduces a compact quantum threshold voltage shift model for a junctionless quadruple-gate FET in the subthreshold region. By calculating electron density and energy levels, the quantum Vth shift model is established. Validation through numerical simulation shows the model accurately captures quantum effects in JL QG FETs for use in circuit simulations.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
William Cheng-Yu Ma, Cai-Jia Tsai
Summary: The independent dual-gate operation improves performance and reliability of the JL-TFT, but may also cause more serious damages. The back gate voltage operation mode provides a wide threshold voltage tuning range, but it is important to note that positive top gate voltage stress may lead to more serious reliability issues.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Ankush Chattopadhyay, Manash Chanda, Chayanika Bose, Chandan K. Sarkar
Summary: This study analyzed the harmonic distortions of a rectangular GAA JL FET using 3D analytical modeling and proposed a potential function based on a semi-analytical method. The impact of flexible depletion lengths in the OFF-state was considered, and an expression for drain current was derived for evaluating harmonic distortions in low-power applications. The proposed model was validated by comparing analytical results with simulated data, and detailed investigation on the output and harmonic characteristics of a cascode amplifier using GAA JL FETs was conducted.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Physics, Condensed Matter
Ankush Chattopadhyay, Manash Chanda, Chayanika Bose, Chandan K. Sarkar
Summary: This paper presents an analytical modeling approach for linearity and intermodulation distortion of a rectangular GAA JL FET using 3D surface potential and drain current. The proposed method offers an alternative solution with good accuracy without the need for complex mathematical computations. The analysis optimizes the device's bias point for RFICs to improve linearity performance.
SUPERLATTICES AND MICROSTRUCTURES
(2021)
Article
Engineering, Electrical & Electronic
Aakash Kumar Jain, Aniket Singha
Summary: The proposed SC NW JLFET effectively reduces the detrimental leakage mechanisms and parasitic bipolar junction transistor action, leading to a significant improvement in device performance. Additionally, the Schottky junction helps to reduce short-channel effects, making the device promising for sub-10-nm technology nodes.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Engineering, Electrical & Electronic
Monica Naorem, Rajan Singh, Roy Paily
Summary: This study successfully fabricated an ionic liquid channel field effect transistor within the trench structure on SiO2, allowing accommodation of any liquid without the need for mold creation or intricate architecture. High I-ON/I-OFF ratio and improved ion mobility were observed through electrical characterization.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Multidisciplinary
Sangeeta Singh, Shradhya Singh, Mustafa K. A. Mohammed, Kamal Kishor Jha, Sajad A. Loan
Summary: In this study, an ultrasensitive, label-free ferroelectric junctionless tunnel field effect transistor-based biosensor is proposed and simulated. The biosensor utilizes a dual inverted-T cavity and negative capacitance behavior to enhance the detection sensitivity of biomolecules. By optimizing the device parameters, the sensing capability of the biosensor is significantly improved compared to other state-of-the-art biosensors.
Review
Chemistry, Physical
Monika Kumari, Niraj Kumar Singh, Manodipan Sahoo, Hafizur Rahaman
Summary: A 2-D analytical model of DMDG-JL-MOSFET based label free biosensor was proposed to investigate the impact of high-kappa gate dielectric materials and cavity length on sensor sensitivity. The model was validated using data from Sentaurus TCAD simulator. Results show that the proposed biosensor exhibits significantly higher sensitivity compared to contemporary JL-MOSFET based biosensors.
Article
Engineering, Electrical & Electronic
Sumi Lee, Yejoo Choi, Sang Min Won, Donghee Son, Hyoung Won Baac, Changhwan Shin
Summary: An optimal device design is proposed in this study to overcome the constraints of high work function of metal gate and low drain current in junctionless complementary field effect transistor (JL-CFET). Various performance metrics are analyzed to support the proposed design, including on-state drive current, subthreshold swing, drain induced barrier lowering, propagation delay time, and ring oscillator's oscillation frequency. Additionally, the negative capacitance effect in JL-CFET is examined.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
Wonjun Shin, Ryun-Han Koo, Sangwoo Kim, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon, Jong-Ho Lee
Summary: This study proposes a novel low-frequency noise measurement method to investigate the origin of threshold voltage instability in junctionless ferroelectric field-effect transistors (JL FeFETs). Depending on the delay time and the number of program/erase cycles, it is found that different types of traps (ferroelectric/dielectric interface trap, ferroelectric bulk trap, and dielectric bulk trap) are responsible for the V-th instability.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Mahdi Vadizadeh
Summary: A GaAs/InAs/Ge junctionless tunnel field-effect transistor (JL-TFET) device with a dual-material gate (DMG) structure is proposed in this article, showing improved performance parameters compared to traditional devices and offering potential for significant impact in digital applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Rishu Chaujar, Mekonnen Getnet Yirak
Summary: In this study, a junctionless gate all around silicon nanowire field-effect transistor (JL-GAA-SiNWFET) sensor was used to detect hydrogen gas (H-2). The sensor showed satisfactory characteristics for safety in handling hydrogen and selectivity in monitoring H-2 among other gases. The shifts in threshold voltage (V-th), Ion, and Ioff due to changes in the palladium (Pd) gate work function make it a sensitive parameter for detecting H-2 gas molecules. The results revealed that JL-GAA-SiNWFET-based sensors had improved sensitivity compared to GAA-MOSFET and MOSFET.