Metal-Semiconductor Field-Effect Transistors With In–Ga–Zn–O Channel Grown by Nonvacuum-Processed Mist Chemical Vapor Deposition

出版年份 2015 全文链接

标题

作者

关键词

出版物

Volume 36, Issue 5, Pages 463-465

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2015-03-12

DOI

10.1109/led.2015.2412124

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