4.8 Article

Mapping Thermal Expansion Coefficients in Freestanding 2D Materials at the Nanometer Scale

期刊

PHYSICAL REVIEW LETTERS
卷 120, 期 5, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.120.055902

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  1. National Science Foundation EFRI 2-DARE [EFMA-1542864]
  2. National Science Foundation [DMR-0959470]
  3. Office of Science of the U.S. Department of Energy [DE-AC02-05CH11231]

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Two-dimensional materials, including graphene, transition metal dichalcogenides and their heterostructures, exhibit great potential for a variety of applications, such as transistors, spintronics, and photovoltaics. While the miniaturization offers remarkable improvements in electrical performance, heat dissipation and thermal mismatch can be a problem in designing electronic devices based on two-dimensional materials. Quantifying the thermal expansion coefficient of 2D materials requires temperature measurements at nanometer scale. Here, we introduce a novel nanometer-scale thermometry approach to measure temperature and quantify the thermal expansion coefficients in 2D materials based on scanning transmission electron microscopy combined with electron energy-loss spectroscopy to determine the energy shift of the plasmon resonance peak of 2D materials as a function of sample temperature. By combining these measurements with first-principles modeling, the thermal expansion coefficients (TECs) of single-layer and freestanding graphene and bulk, as well as monolayer MoS2, MoSe2, WS2, or WSe2, are directly determined and mapped.

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