Designing lateral spintronic devices with giant tunnel magnetoresistance and perfect spin injection efficiency based on transition metal dichalcogenides
出版年份 2018 全文链接
标题
Designing lateral spintronic devices with giant tunnel magnetoresistance and perfect spin injection efficiency based on transition metal dichalcogenides
作者
关键词
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出版物
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 20, Issue 15, Pages 10286-10291
出版商
Royal Society of Chemistry (RSC)
发表日期
2018-04-03
DOI
10.1039/c8cp00557e
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