4.4 Article Proceedings Paper

Multiple Color Inorganic Thin-Film Phosphor, RE-Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201700833

关键词

amorphous oxide semiconductor; gallium oxide; rare earth; thin-film phosphor

资金

  1. Ministry of Education, Culture, Sports, Science and Technology (MEXT) though Element Strategy Initiative to Form Core Research Center
  2. ACCEL Project - Japan Science and Technology Agency (JST)
  3. Japan Society for the Promotion of Science (JSPS) [25106007]
  4. Support for Tokyotech Advanced Research (STAR)
  5. PRESTO, JST [JPMJPR16R1]
  6. JSPS [16K14377, 17K14548, 17H01318]
  7. [15H05543]
  8. Grants-in-Aid for Scientific Research [25106007, 17K14548, 16K14377, 17H01318, 15H05543] Funding Source: KAKEN

向作者/读者索取更多资源

Multi-color inorganic thin-film phosphors are deposited at room temperature on glass substrates using ultra-wide bandgap amorphous gallium oxide (a-GO) as a host material. All of the a-GO films doped with four kinds of rare-earth ions (a-GO:REx) emit visible light, originating from the RE ions, by 238-257 nm ultraviolet light excitation; that is, blue & red emission from RE = Pr3+, red from Sm3+, green from Tb3+, and blue and yellow from Dy3+. The a-GO:Pr-x and a-GO:Tb-x films emit bright light clearly visible by human eyes. Although the internal quantum efficiencies of unannealed a-GO:Pr-0.02 and a-GO:Tb-0.02 films are 0.2 and 1.8%, respectively, those are improved to 2.4 and 3.8 %, respectively, by post-deposition thermal annealing in O-2 at 400 degrees C through desorption of weakly-bonded oxygen and structural relaxation. On the other hand, the annealing temperature to improve photoluminescence is limited by crystallization (onset temperatures 400-500 degrees C).

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