期刊
OPTIK
卷 155, 期 -, 页码 297-300出版社
ELSEVIER GMBH, URBAN & FISCHER VERLAG
DOI: 10.1016/j.ijleo.2017.11.023
关键词
Current-voltage; Capacitance voltage; Photodiode; PIFTS; Planarity; Sensing
类别
A scheme consisted of all-implantation processed planar silicon PIN Photodiode is fabricated and characterized to evaluate and optimise its potential for photo detection applications. Current Voltage, Capacitance Voltage and Photo-Simulated Internal Field Transient Characteristics are presented to check the compatibility of the design device with the CMOS manufacturing process routines, as well as the efficiency of the process. The effect of the variety of light intensities incident on the devices on the physical characteristic is also evaluated and analyzed. Presence of short-span photovoltaic effect is also witnessed in the transient analysis. (C) 2017 Elsevier GmbH. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据