期刊
OPTICS EXPRESS
卷 26, 期 7, 页码 8821-8830出版社
OPTICAL SOC AMER
DOI: 10.1364/OE.26.008821
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资金
- European Union's Horizon Research and Innovation Programme [645314]
- Science Foundation Ireland [12/RC/2276]
An electrically pumped DFB laser integrated on and coupled to a silicon waveguide circuit is demonstrated by transfer printing a 40 x 970 mu m(2) III-V coupon, defined on a III-V epitaxial wafer. A second-order grating defined in the silicon device layer with a period of 477 nm and a duty cycle of 75% was used for realizing single mode emission, while an adiabatic taper structure is used for coupling to the silicon waveguide layer. 18 mA threshold current and a maximum single-sided waveguide-coupled output power above 2 mW is obtained at 20 degrees C. Single mode operation around 1550 nm with >40 dB side mode suppression ratio (SMSR) is realized. This new integration approach allows for the very efficient use of the III-V material and the massively parallel integration of these coupons on a silicon photonic integrated circuit wafer. It also allows for the intimate integration of III-V opto-electronic components based on different epitaxial layer structures. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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