The effect of carrier gas flow rate on the growth of MoS2 nanoflakes prepared by thermal chemical vapor deposition

标题
The effect of carrier gas flow rate on the growth of MoS2 nanoflakes prepared by thermal chemical vapor deposition
作者
关键词
Two-dimensional materials, Molybdenum disulfide, Chemical vapor deposition, Carrier gas flow rate
出版物
OPTICAL AND QUANTUM ELECTRONICS
Volume 50, Issue 6, Pages -
出版商
Springer Nature
发表日期
2018-06-05
DOI
10.1007/s11082-018-1512-2

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