4.8 Article

Large tunable valley splitting in edge-free graphene quantum dots on boron nitride

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NATURE NANOTECHNOLOGY
卷 13, 期 5, 页码 392-+

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NATURE PUBLISHING GROUP
DOI: 10.1038/s41565-018-0080-8

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资金

  1. European Union Seventh Framework Programme [696656]
  2. German Science foundation [Li 1050-2/2, SPP-1459]
  3. Austrian Fonds zur Forderung der wissenschaftlichen Forschung (FWF) [SFB 041-ViCom]
  4. EPSRC
  5. Royal Society
  6. US Army Research Office
  7. ERC via Synergy grant Hetero2D
  8. Lloyd's Register Foundation
  9. Hungarian Academy of Sciences Lendulet [LP2017-9/2017]
  10. US Navy Research Office
  11. US Airforce Research Office
  12. Austrian Fonds zur Forderung der wissenschaftlichen Forschung (FWF) through doctoral college Solids4Fun [W1243]
  13. EPSRC [EP/N010345/1] Funding Source: UKRI
  14. Engineering and Physical Sciences Research Council [EP/N010345/1] Funding Source: researchfish

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Coherent manipulation of the binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid-state systems, whereas exploitation of the valley has only recently been started, albeit without control at the single-electron level. Here, we show that van der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunnelling microscope and demonstrate valley splitting that is tunable from -5 to + 10 meV (including valley inversion) by sub-10-nm displacements of the quantum dot position. This boosts the range of controlled valley splitting by about one order of magnitude. The tunable inversion of spin and valley states should enable coherent superposition of these degrees of freedom as a first step towards graphene-based qubits.

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