期刊
NANOSCALE
卷 10, 期 30, 页码 14472-14479出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8nr04376k
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类别
资金
- Thousands Talents program for pioneer researcher and his innovation team, China
- National Natural Science Foundation of China [51702017, 11704032, 51432005, 5151101243, 51561145021]
- National Key R & D Project from the Minister of Science and Technology [2016YFA0202703, 2016YFA0202704]
- Beijing Municipal Science & Technology Commission [Z171100000317001]
- China Postdoctoral Science Foundation [2017M610837]
Due to the absence of bond fracture and atomic reconstruction under strain, vdWs structures hold great promise in flexible electronic/optoelectronic applications. Besides all-2D heterojunctions, the dangling-bond-free surfaces of 2D materials also enable vdWs interaction with other materials of different dimensionalities, forming mixed-dimensional vdWs heterostructures. Such structures allow a much broader selection of materials and may provide a promising approach to compensate for the intrinsic weakness of 2D crystals before realizing their full potential. In this study, we present the fabrication of a WSe2-CdS mixed-dimensional vdWs p-n heterojunction for flexible photodetection. A strain-tunable vdWs interface was demonstrated and the photoresponse was dramatically enhanced with the piezo-phototronic effect. The photocurrent can be increased by approximate to 110% under a compressive strain of -0.73% and the corresponding photoresponsivity reaches up to 33.4 A W-1. The enhancement originates from realigned local energy-band tilting at the WSe2-CdS interface by strain-induced piezopolarization, which promotes the transport process of photoexcited carriers. Our work provides a new route to a tunable vdWs interface other than with electrostatic gating, which may inspire the development of novel flexible vdWs optoelectronics.
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