4.8 Article

Visualizing Carrier Transport in Metal Halide Perovskite Nanoplates via Electric Field Modulated Photoluminescence Imaging

期刊

NANO LETTERS
卷 18, 期 5, 页码 3024-3031

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b00486

关键词

Lead halide perovskites; nanoplates; carrier drift; photoluminescence; time-resolved PL measurement

资金

  1. National Natural Science Foundation of China [51772084, 51525202, 61574054, 61505051]
  2. Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province
  3. Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scholars of the National Natural Science Foundation of China [61528403]
  4. Foundation for Innovative Research Groups of NSFC [21521063]

向作者/读者索取更多资源

Metal halide perovskite nanostructures have recently been the focus of intense research due to their exceptional optoelectronic properties and potential applications in integrated photonics devices. Charge transport in perovskite nanostructure is a crucial process that defines efficiency of optoelectronic devices but still requires a deep understanding. Herein, we report the study of the charge transport, particularly the drift of minority carrier in both all-inorganic CsPbBr3 and organic-inorganic hybrid CH3NH3PbBr3 perovskite nanoplates by electric field modulated photoluminescence (PL) imaging. Bias voltage dependent elongated PL emission patterns were observed due to the carrier drift at external electric fields. By fitting the drift length as a function of electric field, we obtained the carrier mobility of about 28 cm(2) V-1 S-1 in the CsPbBr3 perovskite nanoplate. The result is consistent with the spatially resolved PL dynamics measurement, confirming the feasibility of the method. Furthermore, the electric field modulated PL imaging is successfully applied to the study of temperature-dependent carrier mobility in CsPbBr3 nanoplates. This work not only offers insights for the mobile carrier in metal halide perovskite nanostructures, which is essential for optimizing device design and performance prediction, but also provides a novel and simple method to investigate charge transport in many other optoelectronic materials.

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