期刊
NANO LETTERS
卷 18, 期 7, 页码 4081-4085出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b00006
关键词
Singlet-triplet; RF; Si:P; STM
类别
资金
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology [CE110001027]
- U.S. Army Research Office [W911NF-17-1-0202]
- Australian Research Council Laureate Fellowship
We present a donor-based quadruple-quantum-dot device, designed to host two singlet-triplet qubits fabricated by scanning tunnelling microscope lithography, with just two leads per qubit. The design is geometrically compact, with each pair of dots independently controlled via one gate and one reservoir. The reservoirs both supply electrons for the dots and measure the singlet-triplet state of each qubit via dispersive sensing. We verify the locations of the four phosphorus donor dots via an electrostatic model of the device. We study one of the observed singlet-triplet states with a tunnel coupling of 39 GHz and a S-0-to-T_ decay of 2 ms at zero detuning. We measure a 5 GHz electrostatic interaction between two pairs of dots separated by 65 nm. The results outline a low gate-density pathway to a scalable 1D building block of atomic-precision singlet-triplet qubits using donors with dispersive readout.
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