期刊
LASER & PHOTONICS REVIEWS
卷 12, 期 6, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/lpor.201800015
关键词
few-layer; molybdenum ditelluride; O-band; photonic crystal cavity; silicon lasers
资金
- National Key R&D Program of China [2016YFA0301300]
- National Natural Science Foundation of China [11761131001, 11674402, 91750207, 11334015, 11761141015]
- Guangzhou Science and Technology projects [201607010044, 201607020023]
- Natural Science Foundation of Guangdong [2016A030312012]
- Three Big Constructions-Supercomputing Application Cultivation Project (National Supercomputer Center In Guangzhou)
- EPSRC of the UK [EP/M015165/1]
The missing piece in the jigsaw of silicon photonics is a light source that can be easily incorporated into the standard silicon fabrication process. Here, silicon laser-like emission is reported that employs few-layer semiconducting transition metal dichalogenides of molybdenum ditelluride (MoTe2) as a gain material in a silicon photonic crystal L3 nanocavity. An optically pumped MoTe2-on-silicon laser-like emission at 1305 nm, i.e. in the center of the O-band of optical communications, is demonstrated at room temperature and with a threshold power density of 1.5 kW/cm(2). The surprising insight is that, contrary to common understanding, a monolayer MoTe2 is not required to achieve higher efficiency laser-like operation. Instead, few-layer MoTe2 offers a higher overlap between the two dimensional (2D) gain material and the optical mode for sufficient gain. The ability to use few-layer material opens new opportunities for deploying manufacturing methods such as chemical vapor deposition and thereby brings 2D-on-silicon devices a step closer to becoming a scalable technology.
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