Control of Mg content and carrier concentration via post annealing under different Mg partial pressures for Sb-doped Mg 2 Si thermoelectric material

标题
Control of Mg content and carrier concentration via post annealing under different Mg partial pressures for Sb-doped Mg 2 Si thermoelectric material
作者
关键词
-
出版物
JOURNAL OF SOLID STATE CHEMISTRY
Volume 258, Issue -, Pages 93-98
出版商
Elsevier BV
发表日期
2017-10-05
DOI
10.1016/j.jssc.2017.10.003

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