Corrigendum: Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application (2018 J. Phys. D: Appl. Phys. 51 055108)

出版年份 2018 全文链接

标题

作者

关键词

出版物

JOURNAL OF PHYSICS D-APPLIED PHYSICS

Volume 51, Issue 19, Pages 199501

出版商

IOP Publishing

发表日期

2018-04-20

DOI

10.1088/1361-6463/aabb46

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