期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 122, 期 18, 页码 9773-9782出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.8b01330
关键词
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资金
- Tier 1 (AcRF grant MOE Singapore) [M401992]
- Tier 2 (AcRF grant MOE Singapore) [M4011528]
- Chinese Natural Science Foundation [51271031, 50701006]
- National Basic Research Program [2014CB6433000]
FeVO4 is a potentially promising n-type multimetal oxide semiconductor for photoelectrochemical water splitting based on its favorable optical band gap of ca. 2.06 eV that allows for the absorption of visible light up to around 600 rim. However, the presently demonstrated photocurrent values on FeVO4 photoanodes are yet considerably low when comparing with alpha-Fe2O3, although FeVO4 can absorb comparable wavelengths of sunlight as alpha-Fe2O3. Donor-type doping and constructing nanoporous film morphology have afforded desirable (but far from satisfactory) improvements in FeVO4 photoanodes, whereas the fundamental properties, such as absorption coefficients and the nature of optical transition, and a quantitative analysis of the efficiency losses for FeVO4 photoanodes remain elusive. In the present study, we conduct a thorough experimental analysis of structural, optical, charge transport, and surface catalysis properties of FeVO4 thin films to investigate and clarify how and where the efficiency losses occur. Based on the results, the charge recombination pathways and light-harvesting loss in FeVO4 thin-film photoanodes are identified and quantitatively determined. Our study will deepen the understanding on the photoelectrochemical behaviors of FeVO4 photoanodes and will also shed light on the optimization routes to engineer this material to approach its theoretical maximum.
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