Chemical Vapor Deposition Carbon Film as a Capping Layer in 4H-SiC Based MOSFETs

标题
Chemical Vapor Deposition Carbon Film as a Capping Layer in 4H-SiC Based MOSFETs
作者
关键词
-
出版物
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 18, Issue 9, Pages 5868-5875
出版商
American Scientific Publishers
发表日期
2018-04-20
DOI
10.1166/jnn.2018.15573

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